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Notes on Reproducibility of Ge2Sb2Te5 Properties
Title: | Notes on Reproducibility of Ge2Sb2Te5 Properties |
Authors: | Tanaka, Keiji Browse this author →KAKEN DB |
Keywords: | amorphous | chalcogenide | phase-change | sputter | electrical conductivity |
Issue Date: | Jun-2020 |
Publisher: | Wiley-Blackwell |
Journal Title: | Physica status solidi B-basic solid state physics |
Volume: | 257 |
Issue: | 6 |
Start Page: | 1900756 |
Publisher DOI: | 10.1002/pssb.201900756 |
Abstract: | Sputtered Ge2Sb2Te5 (GST) films are utilized in phase-change devices, whereas the quantitative reproducibility of fundamental properties such as refractive index and electrical conductivity remains unsatisfactory. Herein, it is exemplified that the properties are considerably affected by sputter conditions. It seems that high-quality amorphous films are deposited with slow dc sputtering at high voltages and low Ar pressures. It is also discussed whether the cubic GST is a degenerate or a nondegenerate semiconductor. |
Rights: | This is the peer reviewed version of the following article: Tanaka, K. (2020), Notes on Reproducibility of Ge2Sb2Te5 Properties. Phys. Status Solidi B, 257: 1900756, which has been published in final form at https://doi.org/10.1002/pssb.201900756. This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Use of Self-Archived Versions. |
Type: | article (author version) |
URI: | http://hdl.handle.net/2115/81620 |
Appears in Collections: | 工学院・工学研究院 (Graduate School of Engineering / Faculty of Engineering) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 田中 啓司
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