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Nitriding of 4H-SiC by irradiation of fourth harmonics of Nd:YAG laser pulses in liquid nitrogen

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Title: Nitriding of 4H-SiC by irradiation of fourth harmonics of Nd:YAG laser pulses in liquid nitrogen
Authors: Shimabayashi, Masaharu Browse this author
Kaneko, Takuma Browse this author
Sasaki, Koichi Browse this author →KAKEN DB
Keywords: Surface nitriding
Laser irradiation
Liquid nitrogen
Issue Date: 4-Jun-2020
Publisher: Springer
Journal Title: SN applied sciences
Volume: 2
Issue: 7
Start Page: 1167
Publisher DOI: 10.1007/s42452-020-2895-9
Abstract: This study presents surface nitriding of 4H-SiC by the irradiation of the fourth harmonics of Nd:YAG laser pulses in liquid nitrogen. A nitride layer with a depth of 1 mu m is formed on the irradiated area. The irradiated area has a bumpy morphology. On the other hand, we also find a nitride layer with a smooth surface morphology in the outside of the irradiated area. The concentration of nitrogen is dependent on the laser fluence, and is 1-5%. The diffusion coefficient of nitrogen, which is deduced from the depth profile of the nitrogen number density, is much greater than the diffusion coefficient in solid SiC, suggesting the transport of nitrogen in melted SiC. Considering the fact that SiC does not have a melted state at the atmospheric pressure, it is revealed by the present work that the melted SiC is realized transiently with the help of the high pressure driven by the laser irradiation.
Rights: This is a post-peer-review, pre-copyedit version of an article published in SN applied sciences. The final authenticated version is available online at:
Type: article (author version)
Appears in Collections:工学院・工学研究院 (Graduate School of Engineering / Faculty of Engineering) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 佐々木 浩一

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