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Chemically Controlled Volatile and Nonvolatile Resistive Memory Characteristics of Novel Oxygen-Based Polymers

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Title: Chemically Controlled Volatile and Nonvolatile Resistive Memory Characteristics of Novel Oxygen-Based Polymers
Authors: Ree, Brian J. Browse this author
Isono, Takuya Browse this author
Satoh, Toshifumi Browse this author →KAKEN DB
Keywords: electroactive oxygen-based polymers
oxyphenyl charge trap sites
nonvolatile and volatile memory
p-type resistive memory
hopping conduction
Issue Date: 24-Jun-2020
Publisher: American Chemical Society
Journal Title: ACS applied materials & interfaces
Volume: 12
Issue: 25
Start Page: 28435
End Page: 28445
Publisher DOI: 10.1021/acsami.0c06939
Abstract: Recent advancements in modern microelectronics continuously increase the data storage capacity of modern devices, but they require delicate and costly fabrication processes. As alternatives to conventional inorganic based semiconductors, semiconducting polymers are of academic and industrial interest for their cost-efficiency, power efficiency, and flexible processability. Here, we have synthesized a series of novel oxygen-based polymers through the postmodification reactions of poly(ethylene-alt-maleate) with various oxybenzyl alcohol derivatives. The oxygen-based polymers are thermally stable up to 180 degrees C, and their nanoscale film devices exhibit reliable, power efficient p-type unipolar volatile and nonvolatile resistive memory characteristics with high ON/OFF current ratios. Additionally, when given a higher number of oxygen atoms in oxyphenyl side groups, the thin film polymer devices demonstrate a wide operational film thickness range. The memory characteristics depend on the oxyphenyl moieties functioning as charge trap sites, where a combination of Schottky emission and trap-limited space charge limited conductions in OFF-state and hopping conduction in ON-state are observed. This study demonstrates the chemical incorporation of oxyphenyl derivatives into polymer dielectrics as a powerful development tool for p-type resistive memory materials.
Rights: This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS applied materials & interfaces, copyright c American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see
Type: article (author version)
Appears in Collections:工学院・工学研究院 (Graduate School of Engineering / Faculty of Engineering) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 佐藤 敏文

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