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Hokkaido University Collection of Scholarly and Academic Papers >
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Electric-Field-Effect Spin Switching with an Enhanced Number of Highly Polarized Electron and Photon Spins Using p-Doped Semiconductor Quantum Dots
| Title: | Electric-Field-Effect Spin Switching with an Enhanced Number of Highly Polarized Electron and Photon Spins Using p-Doped Semiconductor Quantum Dots |
| Authors: | Park, Soyoung Browse this author | | Chen, Hang Browse this author | | Hiura, Satoshi Browse this author | | Takayama, Junichi Browse this author | | Sueoka, Kazuhisa Browse this author →KAKEN DB | | Murayama, Akihiro Browse this author →KAKEN DB |
| Issue Date: | 30-Mar-2021 |
| Publisher: | American Chemical Society |
| Journal Title: | ACS Omega |
| Volume: | 6 |
| Issue: | 12 |
| Start Page: | 8561 |
| End Page: | 8569 |
| Publisher DOI: | 10.1021/acsomega.1c00377 |
| Abstract: | Electric-field-effect spin switching with an enhanced number of highly polarized electron and photon spins has been demonstrated using p-doped semiconductor quantum dots (QDs). Remote p-doping in InGaAs QDs tunnel-coupled with an InGaAs quantum well (QW) significantly increased the circularly polarized, thus electron-spin-polarized, photoluminescence intensity, depending on the electric-field-induced electron spin injection from the QW as a spin reservoir into the QDs. The spin polarity and polarization degree during this spin injection can be controlled by the direction and the strength of the electric field, where the spin direction can be reversed by excess electron spin injection into the QDs via spin scattering at the QD excited states. We found that the maximum degrees of both parallel and antiparallel spin polarization to the initial spin direction in the QW can be enhanced by p-doping. The doped holes without spin polarization can effectively contribute to this electric-field-effect spin switching after the initial electron spin injection selectively removes the parallel hole spins. The optimized p-doping induces fast spin reversals at the QD excited states with a moderate electric-field application, resulting in an efficient electric-field-driven antiparallel spin injection into the QD ground state. Further excess hole doping prevents this efficient spin reversal due to multiple electron-hole spin scattering, in addition to a spin-state filling effect at the QD excited states, during the spin injection from the QW into the QDs. |
| Type: | article |
| URI: | http://hdl.handle.net/2115/82071 |
| Appears in Collections: | 情報科学院・情報科学研究院 (Graduate School of Information Science and Technology / Faculty of Information Science and Technology) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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