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Hokkaido University Collection of Scholarly and Academic Papers >
Graduate School of Information Science and Technology / Faculty of Information Science and Technology >
Peer-reviewed Journal Articles, etc >
Room-Temperature Spin-Transport Properties in an In0.5Ga0.5As Quantum Dot Spin-Polarized Light-Emitting Diode
| Title: | Room-Temperature Spin-Transport Properties in an In0.5Ga0.5As Quantum Dot Spin-Polarized Light-Emitting Diode |
| Authors: | Etou, Kohei Browse this author | | Hiura, Satoshi Browse this author | | Park, Soyoung Browse this author | | Sakamoto, Kazuya Browse this author | | Takayama, Junichi Browse this author | | Subagyo, Agus Browse this author →KAKEN DB | | Sueoka, Kazuhisa Browse this author →KAKEN DB | | Murayama, Akihiro Browse this author →KAKEN DB |
| Issue Date: | 14-Jul-2021 |
| Publisher: | American Physical Society (APS) |
| Journal Title: | Physical review applied |
| Volume: | 16 |
| Issue: | 1 |
| Start Page: | 014034 |
| Publisher DOI: | 10.1103/PhysRevApplied.16.014034 |
| Abstract: | An understanding of the spin-transport properties in semiconductor barriers is essential to improve the performance of spin-polarized light-emitting diodes (spin LEDs) for future optospintronics integration in information processing. Here, we report on the temperature and bias-voltage dependence of spin-transport properties in an In0.5Ga0.5As quantum dot (QD) spin LED using a combination of spin-dependent electroluminescence (EL) and time-resolved photoluminescence. The QD EL spin polarization increases with an increase in temperature above 125 K; this is attributed to the improved conversion efficiency from spin polarization of electrons to circular polarization of photons of the QDs. We find that both the electric field and temperature can enhance spin relaxation in the undoped GaAs barrier above 200 K. At 298 K, the QD EL spin polarization decreases beyond 2.5 V; this is attributed to the enhanced D'yakonov Perel' spin relaxation in the undoped GaAs barrier caused by the increase in electron temperature. This study provides valuable insights into the spin-relaxation mechanism in the semiconductor barrier during the room-temperature operation of the QD spin LED. |
| Rights: | ©2021 American Physical Society |
| Type: | article |
| URI: | http://hdl.handle.net/2115/82469 |
| Appears in Collections: | 情報科学院・情報科学研究院 (Graduate School of Information Science and Technology / Faculty of Information Science and Technology) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 樋浦 諭志
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