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Hokkaido University Collection of Scholarly and Academic Papers >
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Peer-reviewed Journal Articles, etc >
Healing Sulfur Vacancies in Monolayer MoS2 by High-Pressure Sulfur and Selenium Annealing: Implication for High-Performance Transistors
| Title: | Healing Sulfur Vacancies in Monolayer MoS2 by High-Pressure Sulfur and Selenium Annealing: Implication for High-Performance Transistors |
| Authors: | Yanase, Takashi Browse this author | | Uehara, Fumiya Browse this author | | Naito, Itsuki Browse this author | | Nagahama, Taro Browse this author →KAKEN DB | | Shimada, Toshihiro Browse this author →KAKEN DB |
| Keywords: | high-pressure annealing | | MoS2 | | S vacancies | | photoluminescence | | chemical vapor deposition | | monolayer |
| Issue Date: | 23-Oct-2020 |
| Publisher: | American Chemical Society |
| Journal Title: | ACS Applied Nano Materials |
| Volume: | 3 |
| Issue: | 10 |
| Start Page: | 10462 |
| End Page: | 10469 |
| Publisher DOI: | 10.1021/acsanm.0c02385 |
| Abstract: | Developing a technology to terminate chalcogen vacancies for transition-metal dichalcogenides is a crucial task for applications, such as transistors, diodes, and sensors, because chalcogen vacancies degrade the electronic and optical properties. This article reports a healing method of S vacancies in MoS2 by high-pressure annealing under a S vapor pressure of 5 atm. The crystal quality after mechanical transfer, S annealing, and vacuum annealing was systematically studied by observing the photoluminescence (PL). The remarkable recovery of the A-exciton emission peak in the PL spectrum indicated repair of the crystal quality in MoS2 by the S annealing. We also demonstrated that the S vacancies could be terminated by Se atoms using a high-pressure annealing method. The crystal quality of MoS2(1-x)Se2x alloys was confirmed by transmission electron microscopy and electron diffraction. |
| Rights: | This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Applied Nano Materials, copyright c American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see http://doi.org/10.1021/acsanm.0c02385. |
| Type: | article (author version) |
| URI: | http://hdl.handle.net/2115/83045 |
| Appears in Collections: | 工学院・工学研究院 (Graduate School of Engineering / Faculty of Engineering) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 柳瀬 隆
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