Effect of near-threshold ionization on electron attachment in gaseous dielectrics


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Title:	Effect of near-threshold ionization on electron attachment in gaseous dielectrics
Authors:	Sugawara, Hirotake¹ Browse this author →KAKEN DB
	Ishigaki, Takuya Browse this author
	Hirochi, Yuuki Browse this author
	Sakai, Yosuke Browse this author
Authors(alt):	菅原, 広剛¹
Keywords:	gaseous dielectric
	electron attachment
	ionization
	threshold
	electron avalanche
	sulfur hexafluoride
Issue Date:	10-Nov-2004
Publisher:	The Institute of Pure and Applied Physics
Journal Title:	Japanese Journal of Applied Physics
Volume:	43
Issue:	11A
Start Page:	7705
End Page:	7706
Publisher DOI:	10.1143/JJAP.43.7705
Abstract:	It has been predicted that near-threshold ionization (NTI) in a gaseous dielectric inhibits the development of electron avalanche when the gaseous dielectric has a sufficient capability for low-energy electron attachment. The NTI leaves little energy for the primary and secondary electrons involved in the ionization; thus, both electrons can be captured by dielectric gas molecules without further ionization. A computational estimation indicates that this process can occur in SF6.
Type:	article (author version)
URI:	http://hdl.handle.net/2115/832
Appears in Collections:	情報科学院・情報科学研究院 (Graduate School of Information Science and Technology / Faculty of Information Science and Technology) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 菅原広剛

OAI-PMH ( junii2 , jpcoar_1.0 )

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