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Tuning of the Optoelectronic Properties for Transparent Oxide Semiconductor ASnO(3) by Modulating the Size of A-Ions
| Title: | Tuning of the Optoelectronic Properties for Transparent Oxide Semiconductor ASnO(3) by Modulating the Size of A-Ions |
| Authors: | Wei, Mian Browse this author | | Cho, Hai Jun Browse this author | | Ohta, Hiromichi Browse this author →KAKEN DB |
| Keywords: | transparent oxide semiconductor | | BaSnO3 | | SrSnO3 | | CaSnO3 | | optoelectronic properties | | ionic radius | | lattice parameter |
| Issue Date: | 22-Dec-2020 |
| Publisher: | American Chemical Society |
| Journal Title: | ACS Applied Electronic Materials |
| Volume: | 2 |
| Issue: | 12 |
| Start Page: | 3971 |
| End Page: | 3976 |
| Publisher DOI: | 10.1021/acsaelm.0c00806 |
| Abstract: | Recently, La-doped ASnO(3) (A = Ba, Sr, and Ca) films have attracted increasing attention as an active channel of deep-ultraviolet transparent thin-film transistors, owing to their wide band gap and high electrical conductivity. However, the effect of A-site substitution on the optoelectronic properties of ASnO(3) has not been clarified in a detailed systematic study. Here, we show that the optoelectronic properties of ASnO(3) can be tuned systematically by changing the average size of the A-site ion. We heteroepitaxially fabricated ASnO(3) films on (001) LaAlO3 substrates and measured their optical absorption spectra and electron transport properties. The lattice parameter almost lineal I increased from 3.95 to 4.14 with increasing ionic radius of the Asite ion from 1.34 (Ca2+) to 1.61 A (Ba2+), whereas the optical band gap gradually decreased from similar to 4.6 to similar to 3.6 eV with a small positive bowing. With increasing the lattice parameter, the electrical conductivity gradually increased from similar to 10(0) to similar to 10( )(3)S cm(-1) because of gradual increases in both the carrier concentration and mobility. The present results are of significant importance for designing ASnO(3)-based transparent electronic devices. |
| Rights: | This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Applied Electronic Materials, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://pubs.acs.org/doi/10.1021/acsaelm.0c00806 . |
| Type: | article (author version) |
| URI: | http://hdl.handle.net/2115/83637 |
| Appears in Collections: | 電子科学研究所 (Research Institute for Electronic Science) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 太田 裕道
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