|
Hokkaido University Collection of Scholarly and Academic Papers >
Research Institute for Electronic Science >
Peer-reviewed Journal Articles, etc >
Optimization of Two-Dimensional Channel Thickness in Nanometer-Thick SnO2-Based Top-Gated Thin-Film Transistors Using Electric Field Thermopower Modulation : Implications for Flat-Panel Displays
| Title: | Optimization of Two-Dimensional Channel Thickness in Nanometer-Thick SnO2-Based Top-Gated Thin-Film Transistors Using Electric Field Thermopower Modulation : Implications for Flat-Panel Displays |
| Authors: | Liang, Doudou Browse this author | | Chen, Bin-jie Browse this author | | Feng, Bin Browse this author | | Ikuhara, Yuichi Browse this author | | Cho, Hai Jun Browse this author | | Ohta, Hiromichi Browse this author →KAKEN DB |
| Keywords: | electric field thermopower modulation | | effective channel thickness | | amorphous SnO2 | | top-gated thin-film transistor | | HfO2 gate insulator |
| Issue Date: | 24-Dec-2020 |
| Publisher: | American Chemical Society |
| Journal Title: | ACS Applied Nano Materials |
| Volume: | 3 |
| Issue: | 12 |
| Start Page: | 12427 |
| End Page: | 12432 |
| Publisher DOI: | 10.1021/acsanm.0c03069 |
| Abstract: | Transparent amorphous oxide semiconductor (TAOS) based thin-film transistors (TFTs) are essential as the backplane for developing advanced flat panel displays. Among many TAOSs, amorphous (a-) SnO2 is promising active material due to its abundance compared with the state-of-the-art a-InGaZnO4. However, practical application of a-SnO2-based TFTs has not been realized because of its unstable transistor characteristics coming from the high residual carrier concentration. Precise optimization of the two-dimensional channel thickness is required to stabilize the transistor characteristics of a-SnO2 based TFTs. Here we use electric field thermopower modulation analyses to show that the two-dimensional channel thickness of a-SnO2 for TFT can be optimized at similar to 2 nm. After the optimization of the channel thickness, we reduced the thickness of the HfO2 gate insulator film to further improve the transistor characteristics. The resultant TFT exhibited excellent transistor characteristics: on-to-off current ratio of similar to 10(5), normally off behavior (Vth approximate to +0.65 V), small subthreshold swing of'similar to 230 mV/decade, high mobility (similar to 10 cm(2) V-1 s(-1)), and stability in changing oxygen atmospheres. The present results would bring further possibilities for the development of next-generation low-cost and low-power electronic devices. |
| Rights: | This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Applied Nano Materials, copyright c American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://pubs.acs.org/doi/10.1021/acsanm.0c03069 . |
| Type: | article (author version) |
| URI: | http://hdl.handle.net/2115/83696 |
| Appears in Collections: | 電子科学研究所 (Research Institute for Electronic Science) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
|
Submitter: 太田 裕道
|
