HUSCAP logo Hokkaido Univ. logo

Hokkaido University Collection of Scholarly and Academic Papers >
Graduate School of Engineering / Faculty of Engineering >
Peer-reviewed Journal Articles, etc >

Influence of Topological Confinement on Nanoscale Film Morphologies of Tricyclic Block Copolymers

Files in This Item:
BJR-manuscript-5-1.pdf2.37 MBPDFView/Open
Please use this identifier to cite or link to this item:http://hdl.handle.net/2115/84949

Title: Influence of Topological Confinement on Nanoscale Film Morphologies of Tricyclic Block Copolymers
Authors: Ree, Brian J. Browse this author
Satoh, Yusuke Browse this author
Isono, Takuya Browse this author
Satoh, Toshifumi Browse this author →KAKEN DB
Keywords: tricyclic block copolymers
various tricyclic topologies
synchrotron grazing incidence X-ray scattering
nanoscale film morphologies
structural parameters
exceptionally small domain spacing
Issue Date: 11-May-2021
Publisher: American Chemical Society
Journal Title: Macromolecules
Volume: 54
Issue: 9
Start Page: 4120
End Page: 4127
Publisher DOI: 10.1021/acs.macromol.1c00214
Abstract: This study is the first quantitative synchrotron grazing incidence X-ray scattering investigation of nanoscale film morphologies of tricyclic block copolymers based on poly (n-decyl glycidyl ether) (PDGE) and poly (2-(2-(2-methoxyethoxy)-ethoxy)ethyl glycidyl ether) (PTEGGE) blocks in equivalent volume fractions. Both PDGE and PTEGGE blocks of the tricyclic block copolymers are amorphous, but copolymers exhibit phase-separated lamellar nanostructures due to block immiscibility. The lamellar structures vary in their structural parameters such as lamellar orientation and structural integrity stability depending on the degree of topological confinement effect taking effect. Interestingly, sub-10 nm domain spacings are established by all nanostructures, which are remarkably shorter than that of the linear analogue. These exceptionally short domain spacings are evident that the tricyclic block copolymer approach is highly efficient for developing high-performance nanolithographic materials for future advanced semiconductor applications.
Rights: This document is the Accepted Manuscript version of a Published Work that appeared in final form in Macromolecules, copyright © American Chemical Society after peer review and echnical editing by the publisher. To access the final edited and published work see https://pubs.acs.org/articlesonrequest/AOR-YVBIAZJIWJH973BYQYDQ.
Type: article (author version)
URI: http://hdl.handle.net/2115/84949
Appears in Collections:工学院・工学研究院 (Graduate School of Engineering / Faculty of Engineering) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 佐藤 敏文

Export metadata:

OAI-PMH ( junii2 , jpcoar_1.0 )

MathJax is now OFF:


 

 - Hokkaido University