Metal Induced Gap States at tetratetracontane/Cu Interface


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Please use this identifier to cite or link to this item:http://hdl.handle.net/2115/8504

Title:	Metal Induced Gap States at tetratetracontane/Cu Interface
Authors:	Kiguchi, M. Browse this author
	Yoshikawa, G. Browse this author
	Saiki, K. Browse this author
	Arita, R. Browse this author
	Aoki, H. Browse this author
Issue Date:	Mar-2006
Publisher:	EDP Sciences
Journal Title:	Journal de Physique IV
Volume:	132
Start Page:	199
End Page:	203
Publisher DOI:	10.1051/jp4:2006132038
Abstract:	We have shown, both experimentally and theoretically, that the metal-induced gap states (MIGS) can exist in epitaxially grown organic-insulator/metal interfaces. The material chosen is tetratetracontane/Cu(001) with a well-defined interface. The element-selective near edge x-ray absorption fine structure (NEXAFS) exhibits a pre-peak indicative of MIGS. An ab-initio electronic structure calculation supports the existence of the MIGS, and shows how the MIGS wave function looks like.
Rights:	© EDP Sciences 2006
Type:	article (author version)
URI:	http://hdl.handle.net/2115/8504
Appears in Collections:	理学院・理学研究院 (Graduate School of Science / Faculty of Science) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 木口学

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