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Reversible Redox Control of Optoelectronic Properties of Hexagonal Tungsten Oxide Epitaxial Films Grown on YSZ Solid Electrolyte
| Title: | Reversible Redox Control of Optoelectronic Properties of Hexagonal Tungsten Oxide Epitaxial Films Grown on YSZ Solid Electrolyte |
| Authors: | Kim, Gowoon Browse this author | | Cho, Hai Jun Browse this author | | Ohta, Hiromichi Browse this author →KAKEN DB |
| Keywords: | electrochemical control | | redox reaction | | optoelectronic properties | | tungsten oxide | | WO3 | | epitaxial film | | YSZ | | solid electrolyte |
| Issue Date: | 24-Aug-2021 |
| Publisher: | American Chemical Society |
| Journal Title: | ACS Applied Electronic Materials |
| Volume: | 3 |
| Issue: | 8 |
| Start Page: | 3619 |
| End Page: | 3624 |
| Publisher DOI: | 10.1021/acsaelm.1c00522 |
| Abstract: | Controlling the oxygen concentration in metal oxides is one of the most effective ways to modulate their optoelectronic properties. However, such redox control is difficult for metal oxide epitaxial films due to serious damages induced in the lattice, especially around the film/substrate interface during the large volume change upon the redox treatment. For overcoming this problem, the use of metal oxides with a stress-resistant crystal structure can be effective. Here, we show a reversible redox control in the optoelectronic properties of hexagonal tungsten oxide (h-WOx) epitaxial films with a honeycomb structure. We fabricated highly c-axis-oriented h-WOx epitaxial films on the (111) yttria-stabilized zirconia (YSZ) single-crystal substrate. Upon electro-chemical redox treatment at 300 degrees C with the application of +/- 3 V to the YSZ solid electrolyte, the oxygen content x of h-WOx was reversibly controlled in the range of 2.93 <= x <= 2.99 without inducing damage to the crystal lattice. Simultaneously, the electrical conductivity was controlled from similar to 400 S cm(-1) to an insulator, and the optical transmission at 1.5 mu m in the wavelength was controlled in the range of 35-70%. The present results would be useful for developing electrochemical optoelectronic devices based on metal oxide epitaxial films. |
| Rights: | This document is the Accepted Manuscript version of a Published Work that appeared in final form in
[ACS Applied Electronic Materials], copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see [https://pubs.acs.org/articlesonrequest/AOR-SUGYQND5WHTBWYVHUQPS]. | | https://pubs.acs.org/articlesonrequest/AOR-SUGYQND5WHTBWYVHUQPS |
| Type: | article (author version) |
| URI: | http://hdl.handle.net/2115/86608 |
| Appears in Collections: | 電子科学研究所 (Research Institute for Electronic Science) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 太田 裕道
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