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Planar defect in approximant : the case of Cu-Al-Sc alloy
Title: | Planar defect in approximant : the case of Cu-Al-Sc alloy |
Authors: | Ishimasa, Tsutomu Browse this author →KAKEN DB | So, Yeong-Gi Browse this author | Mihalkovic, Marek Browse this author |
Keywords: | Approximants | planar defects | quasicrystals | electron microscopy | Tsai-type | Cu-based | crystallography | icosahedral phases |
Issue Date: | 27-Aug-2021 |
Publisher: | Taylor & Francis |
Journal Title: | Philosophical Magazine |
Volume: | 101 |
Issue: | 21 |
Start Page: | 2295 |
End Page: | 2317 |
Publisher DOI: | 10.1080/14786435.2021.1966539 |
Abstract: | The {110} planar defect formed in the Cu-Al-Sc 1/1 approximant has been studied by means of electron microscopy and 6-dimensional analysis. As the displacement vector of the planar defect, 1/2 <tau,tau(-1),0 > has been proposed. Here tau denotes the golden ratio. This vector corresponds to a 6-dimensional translation of type [111000] and also to the c-linkage of Tsai-type clusters. An atomic structure model of the planar defect has been constructed referring to the structural properties of the regular 1/1 approximant; namely truncated triacontahedron framework and embedded clusters. This structural model was validated by the agreement between the observed and simulated HAADF-STEM images. Models of the intersection of two planar defects and the triple point, where three planar defects intersect, were also proposed. All local structures formed at these defects are understood by the concept of so-called canonical cell tiling. |
Rights: | This is an Accepted Manuscript of an article published by Taylor & Francis in Philosophical Magazine on [date of publication], available online: http://www.tandfonline.com/10.1080/14786435.2021.1966539. |
Type: | article (author version) |
URI: | http://hdl.handle.net/2115/86610 |
Appears in Collections: | 工学院・工学研究院 (Graduate School of Engineering / Faculty of Engineering) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 石政 勉
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