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Hokkaido University Collection of Scholarly and Academic Papers >
Graduate School of Information Science and Technology / Faculty of Information Science and Technology >
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Direct Imaging of Ion Migration in Amorphous Oxide Electronic Synapses with Intrinsic Analog Switching Characteristics
| Title: | Direct Imaging of Ion Migration in Amorphous Oxide Electronic Synapses with Intrinsic Analog Switching Characteristics |
| Authors: | Tsurumaki-Fukuchi, Atsushi Browse this author | | Katase, Takayoshi Browse this author | | Ohta, Hiromichi Browse this author →KAKEN DB | | Arita, Masashi Browse this author →KAKEN DB | | Takahashi, Yasuo Browse this author →KAKEN DB |
| Keywords: | analog resistive switching | | electronic synapses | | memristors | | amorphous metal oxides | | conductive atomic force microscopy | | tantalum oxides |
| Issue Date: | 5-Apr-2023 |
| Publisher: | American Chemical Society |
| Journal Title: | ACS applied materials & interfaces |
| Volume: | 15 |
| Issue: | 13 |
| Start Page: | 16842 |
| End Page: | 16852 |
| Publisher DOI: | 10.1021/acsami.2c21568 |
| Abstract: | Amorphous metal oxides with analog resistive switching functions (i.e., continuous controllability of the electrical resistance) are gaining emerging interest due to their neuromorphic functionalities promising for energy efficient electronics. The mechanisms are currently attributed to field-driven migration of the constituent ions, but the applications are being hindered by the limited understanding of the physical mechanisms due to the difficulty in analyzing the causal ion migration, which occurs on a nanometer or even atomic scale. Here, the direct electrical transport measurement of analog resistive switching and angstro''m scale imaging of the causal ion migration is demonstrated in amorphous TaOx (a-TaOx) by conductive atomic force microscopy. Atomically flat thin films of a-TaOx, which is a practical material for commercial resistive random access memory, are fabricated in this study, and the mechanisms of the three known types of analog resistive switching phenomena (current-dependent set, voltage-dependent reset, and time-dependent switching) are directly visualized on the surfaces. The observations indicate that highly analog type of resistive switching can be induced in a-TaOx by inducing the continuous redox reactions for 2.0 < x < 2.5, which are characteristic of a-TaOx. The measurements also demonstrate drastic control of the switching stochasticity, which is attributable to controlled segregation of a metastable a-TaO2 phase. The findings provide direct clues for tuning the analog resistive switching characteristics of amorphous metal oxides and developing new functions for future neuromorphic computing. |
| Type: | article |
| URI: | http://hdl.handle.net/2115/89271 |
| Appears in Collections: | 情報科学院・情報科学研究院 (Graduate School of Information Science and Technology / Faculty of Information Science and Technology) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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