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Antiferroelectric-to-ferroelectric phase transition in hexagonal rare-earth iron oxides
| Title: | Antiferroelectric-to-ferroelectric phase transition in hexagonal rare-earth iron oxides |
| Authors: | Chen, Binjie Browse this author | | Hasegawa, Tetsuya Browse this author | | Ohta, Hiromichi Browse this author →KAKEN DB | | Katayama, Tsukasa Browse this author →KAKEN DB |
| Issue Date: | 14-Apr-2022 |
| Publisher: | Royal Society of Chemistry |
| Journal Title: | Journal of materials chemistry C |
| Volume: | 10 |
| Issue: | 14 |
| Start Page: | 5621 |
| End Page: | 5626 |
| Publisher DOI: | 10.1039/d1tc05944k |
| Abstract: | Ferroic oxides often exhibit exotic behavior, accompanied by phase transitions. Hexagonal rare-earth iron oxides (h-RFeO3), a promising multiferroic system, have been reported to exhibit ferroelectricity (FE) when the lattice parameter ratio (c/a) exceeds 1.93 and antiferroelectricity (AFE) when c/a is equal to 1.89. Although the AFE-FE phase boundary in the h-RFeO3 systems is assumed to exist at c/a approximate to 1.9, the phase transition has not been observed so far due to the lack of samples with such a c/a ratio. In this study, we show the AFE-FE phase transition in h-RFeO3 films, where R = Dy. We fabricated h-DyFeO3 films with c/a ratios of 1.90-1.92 by controlling the film thicknesses. The h-DyFeO3 films with a c/a ratio of 1.91 exhibited AFE at temperatures below 200 K and FE at temperatures up to 300 K. The phase transition temperature (T-p) was modulated by the c/a ratio. The films also underwent an AFE-FE phase transition upon adjusting the frequency of the voltage applied at the T-p. We discuss the possible origin of the AFE-FE phase transition from the viewpoint of the migration length of the FE domain wall motion. |
| Type: | article (author version) |
| URI: | http://hdl.handle.net/2115/89330 |
| Appears in Collections: | 電子科学研究所 (Research Institute for Electronic Science) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 片山 司
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