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Predicting the amount of carbon in carbon nanotubes grown by CH4 rf plasmas

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Title: Predicting the amount of carbon in carbon nanotubes grown by CH4 rf plasmas
Authors: Okita, Atsushi Browse this author
Suda, Yoshiyuki Browse this author
Ozeki, Atsushi Browse this author
Sugawara, Hirotake4 Browse this author →KAKEN DB
Sakai, Yosuke Browse this author
Authors(alt): 菅原, 広剛4
Issue Date: 3-Jan-2006
Publisher: American Institute of Physics
Journal Title: Journal of Applied Physics
Volume: 99
Issue: 1
Start Page: 014302-1
End Page: 014302-7
Publisher DOI: 10.1063/1.2150599
Abstract: Carbon nanotubes (CNTs) were grown on Si substrates by rf CH4 plasma-enhanced chemical vapor deposition in a pressure range of 1–10 Torr, and then characterized by scanning electron microscopy. At 1 Torr, the CNTs continued growing up to 60 min, while their height at 4 Torr had leveled off at 20 min. CNTs hardly grew at 10 Torr and amorphous carbon was deposited instead. CH4 plasma was simulated using a one-dimensional fluid model to evaluate the production and transport of radicals, ions, and nonradical neutrals. The amount of simulated carbon supplied to the electrode surface via the flux of radicals and ions such as CH3, C2H5, and C2H was consistent with estimations from experimental results.
Rights: Copyright © 2006 American Institute of Physics
Relation: http://www.aip.org/
Type: article
URI: http://hdl.handle.net/2115/911
Appears in Collections:情報科学院・情報科学研究院 (Graduate School of Information Science and Technology / Faculty of Information Science and Technology) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 菅原 広剛

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