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Predicting the amount of carbon in carbon nanotubes grown by CH4 rf plasmas

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タイトル: Predicting the amount of carbon in carbon nanotubes grown by CH4 rf plasmas
著者: Okita, Atsushi 著作を一覧する
Suda, Yoshiyuki 著作を一覧する
Ozeki, Atsushi 著作を一覧する
Sugawara, Hirotake 著作を一覧する
Sakai, Yosuke 著作を一覧する
発行日: 2006年 1月 3日
出版者: American Institute of Physics
誌名: Journal of Applied Physics
巻: 99
号: 1
開始ページ: 014302-1
終了ページ: 014302-7
出版社 DOI: 10.1063/1.2150599
抄録: Carbon nanotubes (CNTs) were grown on Si substrates by rf CH4 plasma-enhanced chemical vapor deposition in a pressure range of 1–10 Torr, and then characterized by scanning electron microscopy. At 1 Torr, the CNTs continued growing up to 60 min, while their height at 4 Torr had leveled off at 20 min. CNTs hardly grew at 10 Torr and amorphous carbon was deposited instead. CH4 plasma was simulated using a one-dimensional fluid model to evaluate the production and transport of radicals, ions, and nonradical neutrals. The amount of simulated carbon supplied to the electrode surface via the flux of radicals and ions such as CH3, C2H5, and C2H was consistent with estimations from experimental results.
Rights: Copyright © 2006 American Institute of Physics
Relation (URI):
資料タイプ: article
出現コレクション:雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

提供者: 菅原 広剛


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