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Improved Electron Transport Properties of Zn-Rich In-Ga-Zn-O Thin-Film Transistors

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Title: Improved Electron Transport Properties of Zn-Rich In-Ga-Zn-O Thin-Film Transistors
Authors: Ghediya, Prashant Browse this author
Yang, Hui Browse this author
Fujimoto, Takashi Browse this author
Zhang, Yuqiao Browse this author
Matsuo, Yasutaka Browse this author
Magari, Yusaku Browse this author
Ohta, Hiromichi Browse this author →KAKEN DB
Issue Date: 9-Feb-2023
Publisher: American Chemical Society
Journal Title: Journal of physical chemistry c
Volume: 127
Issue: 5
Start Page: 2622
End Page: 2627
Publisher DOI: 10.1021/acs.jpcc.2c07442
Abstract: Amorphous transparent oxide semiconductor InGaZnO4 (IGZO)-based thin-film transistors (TFTs) have been practically used as the backplane of flat panel displays. For future higher-definition displays, alternative active materials with a higher field effect mobility (mu FE) are necessary. Although there are a few reports on InGaO3(ZnO)(m) with Zn-rich composition (IGZOm)based TFTs, their electron transport properties have not been clarified. Here, we show that a Zn-rich composition enhances the electron transport properties of IGZO(m)-TFTs. The best TFT performance was obtained for m = 7 (mu FE similar to 12 cm(2) V-1 s(-1), subthreshold swing similar to 0.1 V decade(-1), and a negligibly small bias stress shift). The carrier effective mass (m*) of IGZO(m) films was found to be 0.16 m(0), independent of the m-value. We found that mu F-E of IGZO(m)-TFT increased with the m-value for m <= 7, whereas it decreased for m > 7 due to the crystallization. The thermopower modulation analyses revealed that the effective channel thickness increased with m (m <= 7), which resulted in a longer carrier relaxation time. The present results provide an improving strategy toward new material design for next-generation TFTs with higher mu(FE) values.
Rights: This document is the Accepted Manuscript version of a Published Work that appeared in final form in Journal of physical chemistry c, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see
Type: article (author version)
Appears in Collections:電子科学研究所 (Research Institute for Electronic Science) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 太田 裕道

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