|
Hokkaido University Collection of Scholarly and Academic Papers >
Research Institute for Electronic Science >
Peer-reviewed Journal Articles, etc >
Improved Electron Transport Properties of Zn-Rich In-Ga-Zn-O Thin-Film Transistors
| Title: | Improved Electron Transport Properties of Zn-Rich In-Ga-Zn-O Thin-Film Transistors |
| Authors: | Ghediya, Prashant Browse this author | | Yang, Hui Browse this author | | Fujimoto, Takashi Browse this author | | Zhang, Yuqiao Browse this author | | Matsuo, Yasutaka Browse this author | | Magari, Yusaku Browse this author | | Ohta, Hiromichi Browse this author →KAKEN DB |
| Issue Date: | 9-Feb-2023 |
| Publisher: | American Chemical Society |
| Journal Title: | Journal of physical chemistry c |
| Volume: | 127 |
| Issue: | 5 |
| Start Page: | 2622 |
| End Page: | 2627 |
| Publisher DOI: | 10.1021/acs.jpcc.2c07442 |
| Abstract: | Amorphous transparent oxide semiconductor InGaZnO4 (IGZO)-based thin-film transistors (TFTs) have been practically used as the backplane of flat panel displays. For future higher-definition displays, alternative active materials with a higher field effect mobility (mu FE) are necessary. Although there are a few reports on InGaO3(ZnO)(m) with Zn-rich composition (IGZOm)based TFTs, their electron transport properties have not been clarified. Here, we show that a Zn-rich composition enhances the electron transport properties of IGZO(m)-TFTs. The best TFT performance was obtained for m = 7 (mu FE similar to 12 cm(2) V-1 s(-1), subthreshold swing similar to 0.1 V decade(-1), and a negligibly small bias stress shift). The carrier effective mass (m*) of IGZO(m) films was found to be 0.16 m(0), independent of the m-value. We found that mu F-E of IGZO(m)-TFT increased with the m-value for m <= 7, whereas it decreased for m > 7 due to the crystallization. The thermopower modulation analyses revealed that the effective channel thickness increased with m (m <= 7), which resulted in a longer carrier relaxation time. The present results provide an improving strategy toward new material design for next-generation TFTs with higher mu(FE) values. |
| Rights: | This document is the Accepted Manuscript version of a Published Work that appeared in final form in Journal of physical chemistry c, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://pubs.acs.org/doi/full/10.1021/acs.jpcc.2c07442 |
| Type: | article (author version) |
| URI: | http://hdl.handle.net/2115/91224 |
| Appears in Collections: | 電子科学研究所 (Research Institute for Electronic Science) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
|
Submitter: 太田 裕道
|
