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Hokkaido University Collection of Scholarly and Academic Papers
>
Theses
>
博士 (工学)
>
AlGaN/GaNヘテロ構造における表面・界面の評価および制御とトランジスタ応用
Files in This Item:
Ryota_Ochi.pdf
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Please use this identifier to cite or link to this item:
https://doi.org/10.14943/doctoral.k16003
Related Items in HUSCAP:
論文内容及び審査の要旨
AlGaN/GaNヘテロ構造における表面・界面の評価および制御とトランジスタ応用 [論文内容及び審査の要旨]
Title:
AlGaN/GaNヘテロ構造における表面・界面の評価および制御とトランジスタ応用
Other Titles:
Characterization and control of surface and interface on AlGaN/GaN heterostructures for transistor applications
Authors:
越智, 亮太
Browse this author
Issue Date:
25-Mar-2024
Publisher:
Hokkaido University
Conffering University:
北海道大学
Degree Report Number:
甲第16003号
Degree Level:
博士
Degree Discipline:
工学
Examination Committee Members:
(主査) 教授 本久 順一, 教授 太田 裕道, 准教授 赤澤 正道
Degree Affiliation:
情報科学院(情報科学専攻)
Type:
theses (doctoral)
URI:
http://hdl.handle.net/2115/91955
Appears in Collections:
学位論文 (Theses)
>
博士 (工学)
課程博士 (Doctorate by way of Advanced Course)
>
情報科学院(Graduate School of Information Science and Technology)
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