AlGaN/GaNヘテロ構造における表面・界面の評価および制御とトランジスタ応用


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Please use this identifier to cite or link to this item:https://doi.org/10.14943/doctoral.k16003

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Title:	AlGaN/GaNヘテロ構造における表面・界面の評価および制御とトランジスタ応用
Other Titles:	Characterization and control of surface and interface on AlGaN/GaN heterostructures for transistor applications
Authors:	越智, 亮太 Browse this author
Issue Date:	25-Mar-2024
Publisher:	Hokkaido University
Conffering University:	北海道大学
Degree Report Number:	甲第16003号
Degree Level:	博士
Degree Discipline:	工学
Examination Committee Members:	(主査) 教授本久順一, 教授太田裕道, 准教授赤澤正道
Degree Affiliation:	情報科学院(情報科学専攻)
Type:	theses (doctoral)
URI:	http://hdl.handle.net/2115/91955
Appears in Collections:	課程博士 (Doctorate by way of Advanced Course) > 情報科学院(Graduate School of Information Science and Technology) 学位論文 (Theses) > 博士　（工学）

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