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Electric-field driven source of photocarriers for tunable electron spin polarization in InGaAs quantum dots
| Title: | Electric-field driven source of photocarriers for tunable electron spin polarization in InGaAs quantum dots |
| Authors: | Kise, Hiroto Browse this author | | Hiura, Satoshi Browse this author | | Park, Soyoung Browse this author →KAKEN DB | | Takayama, Junichi Browse this author →KAKEN DB | | Sueoka, Kazuhisa Browse this author →KAKEN DB | | Murayama, Akihiro Browse this author →KAKEN DB |
| Keywords: | Spintronics | | Electronic transport | | Quantum dots | | Semiconductors | | Superlattices | | Quantum wells | | Electric fields | | Time-resolved photoluminescence | | Polarization |
| Issue Date: | 5-Jun-2023 |
| Publisher: | AIP Publishing |
| Journal Title: | Applied physics letters |
| Volume: | 122 |
| Issue: | 23 |
| Start Page: | 232405 |
| Publisher DOI: | 10.1063/5.0151467 |
| Abstract: | Electric-field control of spin polarization of electrons during injection into InGaAs quantum dots (QDs) was studied via circularly polarized time-resolved photoluminescence. Electric-field modulation of optical spin polarization in QDs will play a key role in future progress of semiconductor opto-spintronics. The tuning of band potentials by applying external electric fields can not only affect spin-injection efficiencies but also switch dominant spin-injection layers. In this study, we developed a QD-based electric-field-effect optical spin device with two different spin-injection layers, which consisted of a GaAs and GaAs/Al0.15Ga0.85As superlattice (SL) barriers. The bias-voltage modulation of the optical spin polarization in QDs was demonstrated by changing the spin polarization degree of electrons injected from these barriers into the QD via the electric-field switching of the spin-injection layers. This was achieved by exploiting the difference in spin relaxation properties between bulk GaAs and the SL. This proposed structure, which comprised of one luminescent layer and two spin-injection layers, is highly scalable because the modulation range of optical spin polarization can be enhanced by changing the combination of spin-injection layers, as well as the material used and its layer thickness. |
| Rights: | This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing.
This article appeared in Appl. Phys. Lett. 122, 232405 (2023) and may be found at https://doi.org/10.1063/5.0151467. |
| Type: | article |
| URI: | http://hdl.handle.net/2115/92574 |
| Appears in Collections: | 情報科学院・情報科学研究院 (Graduate School of Information Science and Technology / Faculty of Information Science and Technology) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 樋浦 諭志
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