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Significant Reduction in the Switching Time of Solid-State Electrochemical Thermal Transistors
Title: | Significant Reduction in the Switching Time of Solid-State Electrochemical Thermal Transistors |
Authors: | Yoshimura, Mitsuki Browse this author | Yang, Qian Browse this author | Bian, Zhiping Browse this author | Ohta, Hiromichi Browse this author →KAKEN DB |
Keywords: | solid-state electrochemical thermal transistor | YSZ | redox treatment | structural phase transition | SrCoO x |
Issue Date: | 24-Jul-2023 |
Publisher: | American Chemical Society |
Journal Title: | ACS Applied Electronic Materials |
Volume: | 5 |
Issue: | 8 |
Start Page: | 4233 |
End Page: | 4239 |
Publisher DOI: | 10.1021/acsaelm.3c00512 |
Abstract: | Thermal transistors have the remarkable ability to electrochemicallyswitch the thermal conductivity (& kappa;) of an active material. Severalthermal transistors have been reported to control heat flow, but theyare impractical because they use liquid electrolytes. Recently, werealized a solid-state thermal transistor that electrochemically controlsthe & kappa; of SrCoO x (2 & LE; x & LE; 3) using 0.5-mm-thick yttria-stabilized zirconia(YSZ) single crystal substrates as a solid electrolyte at 280 & DEG;C.The applicable electric current is low (50 & mu;A) due to the highelectrical resistivity of YSZ at 280 & DEG;C. Consequently, & kappa;switching is slow (& SIM;3 min). Herein, we aim to reduce the switchingtime by examining several SrCoO x -basedthermal transistors using YSZ substrates with varied thicknesses.The x in SrCoO x is controlledbetween 2 and 3, and the & kappa; switches between 0.97 and 3.86 Wm(-1) K-1. The overall electricalresistance decreases as the YSZ thickness decreases. For a 0.1-mm-thickYSZ substrate, the applicable current increases to 1 mA and the switchingtime is significantly reduced to & SIM;10 s. |
Rights: | This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Applied Electronic Materials, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://pubs.acs.org/articlesonrequest/AOR-YWZZNTKVC3BVCJVFFS6X |
Type: | article (author version) |
URI: | http://hdl.handle.net/2115/92849 |
Appears in Collections: | 電子科学研究所 (Research Institute for Electronic Science) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 太田 裕道
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