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TypeAuthor(s)TitleOther TitlesCitationCitation(alt)Issue Date
bulletin (article)横山, 勇治; 大野, 英男; 長谷川, 英機; 下妻, 光夫「非晶質シリコン薄膜トランジスタのドレイン電流ドリフト特性とその機構」Characterization and Mechanism of Drain Current Drift in Hydrogenated Amorphous Silicon Thin Film Transistor北海道大學工學部研究報告Bulletin of the Faculty of Engineering, Hokkaido University30-May-1988
bulletin (article)橋詰, 保; 池田, 英治; 赤津, 祐史; 大野, 英男; 長谷川, 英機MOCVD成長によるアンドープGaAs中の電子トラップDeep Electron Traps in Undoped GaAs Grown by MOCVD北海道大學工學部研究報告Bulletin of the Faculty of Engineering, Hokkaido University31-May-1984
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