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theses (doctoral)
西口, 賢弥
Surface-related operation instabilities of GaN HEMTs and their control using Al2O3-based MOS structures
GaN HEMTにおける表面起因の動作不安定性とAl2O3 MOS構造による制御
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22-Mar-2018
theses (doctoral - abstract and summary of review)
西口, 賢弥
Surface-related operation instabilities of GaN HEMTs and their control using Al2O3-based MOS structures [an abstract of dissertation and a summary of dissertation review]
GaN HEMTにおける表面起因の動作不安定性とAl2O3 MOS構造による制御 [論文内容及び審査の要旨]
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22-Mar-2018
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