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Hokkaido University Collection of Scholarly and Academic Papers >
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| Type | Author(s) | Title | Other Titles | Citation | Citation(alt) | Issue Date | | article | Hori, Y.; Yatabe, Z.; Hashizume, T. | Characterization of interface states in Al2O3/AlGaN/GaN structures for improved performance of high-electron-mobility transistors | - | Journal of Applied Physics | - | 27-Dec-2013 |
| article | Matys, M.; Adamowicz, B.; Hori, Y.; Hashizume, T. | Direct measurement of donor-like interface state density and energy distribution at insulator/AlGaN interface in metal/Al2O3/AlGaN/GaN by photocapacitance method | - | Applied Physics Letters | - | 10-Jul-2013 |
| bulletin (article) | Sueoka, K.; Sasaki, M.; Hamanaka, I.; Hori, Y.; Mukasa, K.; Hayakawa, K.; Sasaki, Y.; Iwata, T.; Adachi, H. | Mott Spin Polarimeter with Spherical Acceleration Electrodes | - | Memoirs of the Faculty of Engineering, Hokkaido University | 北海道大学工学部紀要 | 1994 |
Showing results 1 to 3 of 3
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