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Characterization of interface states in Al2O3/AlGaN/GaN structures for improved performance of high-electron-mobility transistors
| Title: | Characterization of interface states in Al2O3/AlGaN/GaN structures for improved performance of high-electron-mobility transistors |
| Authors: | Hori, Y. Browse this author | | Yatabe, Z. Browse this author | | Hashizume, T. Browse this author →KAKEN DB |
| Issue Date: | 27-Dec-2013 |
| Publisher: | American Institute of Physics |
| Journal Title: | Journal of Applied Physics |
| Volume: | 114 |
| Issue: | 24 |
| Start Page: | 244503 |
| Publisher DOI: | 10.1063/1.4859576 |
| Abstract: | We have investigated the relationship between improved electrical properties of Al2O3/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) and electronic state densities at the Al2O3/AlGaN interface evaluated from the same structures as the MOS-HEMTs. To evaluate Al2O3/AlGaN interface state densities of the MOS-HEMTs, two types of capacitance-voltage (C-V) measurement techniques were employed: the photo-assisted C-V measurement for the near-midgap states and the frequency dependent C-V characteristics for the states near the conduction-band edge. To reduce the interface states, an N2O-radical treatment was applied to the AlGaN surface just prior to the deposition of the Al2O3 insulator. As compared to the sample without the treatment, the N2O-radical treated Al2O3/AlGaN/GaN structure showed smaller frequency dispersion of the C-V curves in the positive gate bias range. The state densities at the Al2O3/AlGaN interface were estimated to be 1 × 1012 cm-2 eV-1 or less around the midgap and 8 × 1012 cm-2 eV-1 near the conduction-band edge. In addition, we observed higher maximum drain current at the positive gate bias and suppressed threshold voltage instability under the negative gate bias stress even at 150 °C. Results presented in this paper indicated that the N2O-radical treatment is effective both in reducing the interface states and improving the electrical properties of the Al2O3/AlGaN/GaN MOS-HEMTs. |
| Rights: | Copyright 2013 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in J. Appl. Phys. 114, 244503(2013) and may be found at http://scitation.aip.org/content/aip/journal/jap/114/24/10.1063/1.4859576 |
| Type: | article |
| URI: | http://hdl.handle.net/2115/54555 |
| Appears in Collections: | 量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 橋詰 保
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