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Direct measurement of donor-like interface state density and energy distribution at insulator/AlGaN interface in metal/Al2O3/AlGaN/GaN by photocapacitance method

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Title: Direct measurement of donor-like interface state density and energy distribution at insulator/AlGaN interface in metal/Al2O3/AlGaN/GaN by photocapacitance method
Authors: Matys, M. Browse this author
Adamowicz, B. Browse this author
Hori, Y. Browse this author
Hashizume, T. Browse this author →KAKEN DB
Issue Date: 8-Jul-2013
Publisher: American Institute of Physics
Journal Title: Applied Physics Letters
Volume: 103
Issue: 2
Publisher DOI: 10.1063/1.4813407
Abstract: We determined the energy distribution of donor-like interface state density D-itD(E) at the Al2O3/AlGaN interface in a metal/Al2O3/AlGaN/GaN heterostructure (MISH) capacitor. In this order, we developed a point-by-point graphical method based on the measurement and simulations of the MISH photocapacitance versus ultraviolet light intensity. We found a tail-like shaped D-itD(E) strongly decreasing from the value of 5 x 10(13) to 4 x 10(12) eV(-1) cm(-2) in the energy range between 0.12 eV and 0.45 eV from the AlGaN valence band edge. (C) 2013 AIP Publishing LLC.
Rights: Copyright 2013 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett. 103, 021603 (2013) and may be found at http://apl.aip.org/resource/1/applab/v103/i2/p021603_s1
Type: article
URI: http://hdl.handle.net/2115/53087
Appears in Collections:量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 橋詰 保

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