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Direct measurement of donor-like interface state density and energy distribution at insulator/AlGaN interface in metal/Al2O3/AlGaN/GaN by photocapacitance method
| Title: | Direct measurement of donor-like interface state density and energy distribution at insulator/AlGaN interface in metal/Al2O3/AlGaN/GaN by photocapacitance method |
| Authors: | Matys, M. Browse this author | | Adamowicz, B. Browse this author | | Hori, Y. Browse this author | | Hashizume, T. Browse this author →KAKEN DB |
| Issue Date: | 10-Jul-2013 |
| Publisher: | American Institute of Physics |
| Journal Title: | Applied Physics Letters |
| Volume: | 103 |
| Issue: | 2 |
| Start Page: | 21603 |
| Publisher DOI: | 10.1063/1.4813407 |
| Abstract: | We determined the energy distribution of donor-like interface state density D-itD(E) at the Al2O3/AlGaN interface in a metal/Al2O3/AlGaN/GaN heterostructure (MISH) capacitor. In this order, we developed a point-by-point graphical method based on the measurement and simulations of the MISH photocapacitance versus ultraviolet light intensity. We found a tail-like shaped D-itD(E) strongly decreasing from the value of 5 x 10(13) to 4 x 10(12) eV(-1) cm(-2) in the energy range between 0.12 eV and 0.45 eV from the AlGaN valence band edge. (C) 2013 AIP Publishing LLC. |
| Rights: | Copyright 2013 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett. 103, 021603 (2013) and may be found at http://apl.aip.org/resource/1/applab/v103/i2/p021603_s1 |
| Type: | article |
| URI: | http://hdl.handle.net/2115/53087 |
| Appears in Collections: | 量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 橋詰 保
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