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Hokkaido University Collection of Scholarly and Academic Papers >
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| Type | Author(s) | Title | Other Titles | Citation | Citation(alt) | Issue Date | | article (author version) | Kasai, Seiya; Jinushi, Kei-ichiroh; Tomozawa, Hidemasa; Hasegawa, Hideki | Fabrication and Characterization of GaAs Single Electron Devices Having Single and Multiple Dots Based on Schottky In-Plane-Gate and Wrap-Gate Control of Two-Dimensional Electron Gas | - | Japanese Journal of Applied Physics. Pt. 1, Regular papers, short notes & review papers | - | Mar-1997 |
| bulletin (article) | 松崎, 賢一郎; 友沢, 秀征; 駱, 季奎; 大野, 英男; 長谷川, 英機 | 分子線エピタキシ法によるGaAsおよびInGaAs選択ドープへテロ構造の形成と2次元電子ガスの特性評価 | The Growth of GaAs and InGaAs Selectively Doped Hetero-structures by Molecular Beam Epitaxy and Characterization of Two-dimensional Electron Gas | 北海道大學工學部研究報告 | Bulletin of the Faculty of Engineering, Hokkaido University | 31-May-1989 |
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