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Peer-reviewed Journal Articles, etc >
Gate Control, Surface Leakage Currents and Peripheral Charging in AlGaN/GaN Heterostructure Field Effect Transistors Having Nanometer-Scale Schottky Gates
| Title: | Gate Control, Surface Leakage Currents and Peripheral Charging in AlGaN/GaN Heterostructure Field Effect Transistors Having Nanometer-Scale Schottky Gates |
| Authors: | Kasai, S. Browse this author →KAKEN DB | | Kotani, J. Browse this author | | Hashizume, T. Browse this author | | Hasegawa, H. Browse this author |
| Keywords: | GaN | | heterojunction FET (HFET) | | Schottky gate | | gate leakage current | | surface state | | virtual gate |
| Issue Date: | Apr-2006 |
| Publisher: | The Minerals, Metals & Materials Society (TMS) |
| Journal Title: | Journal of Electronic Materials |
| Volume: | 35 |
| Issue: | 4 |
| Start Page: | 568 |
| End Page: | 575 |
| Publisher DOI: | 10.1007/s11664-006-0101-5 |
| Abstract: | Gate control properties together with gate leakage currents in AlGaN/GaN HFETs with nm-scale Schottky gates were investigated focusing on effects of AlGaN surfaces at the gate periphery. Fabricated AlGaN/GaN HFETs showed unexpectedly small gate length (LG)-dependence of transconductance, gm. Comparison of transfer characteristics from theory and experiment, effective LG in the fabricated devices were found much longer than geometrical size in the order of 100 nm, indicating the formation of virtual gates. Detailed analysis of the gate leakage current behaviors based on a thin surface barrier model showed the presence of strong electric field at the gate periphery. Mechanism of the virtual gate formation was discussed based on the obtained nm-scale Schottky gate behaviors. |
| Rights: | Copyright (c) 2006 The Minerals, Metals & Materials Society (TMS) |
| Type: | article (author version) |
| URI: | http://hdl.handle.net/2115/10522 |
| Appears in Collections: | 量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 葛西 誠也
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