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Gate Control, Surface Leakage Currents and Peripheral Charging in AlGaN/GaN Heterostructure Field Effect Transistors Having Nanometer-Scale Schottky Gates

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Please use this identifier to cite or link to this item:http://hdl.handle.net/2115/10522

Title: Gate Control, Surface Leakage Currents and Peripheral Charging in AlGaN/GaN Heterostructure Field Effect Transistors Having Nanometer-Scale Schottky Gates
Authors: Kasai, S. Browse this author →KAKEN DB
Kotani, J. Browse this author
Hashizume, T. Browse this author
Hasegawa, H. Browse this author
Keywords: GaN
heterojunction FET (HFET)
Schottky gate
gate leakage current
surface state
virtual gate
Issue Date: Apr-2006
Publisher: The Minerals, Metals & Materials Society (TMS)
Journal Title: Journal of Electronic Materials
Volume: 35
Issue: 4
Start Page: 568
End Page: 575
Abstract: Gate control properties together with gate leakage currents in AlGaN/GaN HFETs with nm-scale Schottky gates were investigated focusing on effects of AlGaN surfaces at the gate periphery. Fabricated AlGaN/GaN HFETs showed unexpectedly small gate length (LG)-dependence of transconductance, gm. Comparison of transfer characteristics from theory and experiment, effective LG in the fabricated devices were found much longer than geometrical size in the order of 100 nm, indicating the formation of virtual gates. Detailed analysis of the gate leakage current behaviors based on a thin surface barrier model showed the presence of strong electric field at the gate periphery. Mechanism of the virtual gate formation was discussed based on the obtained nm-scale Schottky gate behaviors.
Rights: Copyright (c) 2006 The Minerals, Metals & Materials Society (TMS)
Type: article (author version)
URI: http://hdl.handle.net/2115/10522
Appears in Collections:量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 葛西 誠也

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