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Selective molecular beam epitaxy growth of size- and position-controlled GaN/AlGaN nanowires on nonplanar (0001) substrates and its growth mechanism

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Title: Selective molecular beam epitaxy growth of size- and position-controlled GaN/AlGaN nanowires on nonplanar (0001) substrates and its growth mechanism
Authors: Sato, Taketomo Browse this author →KAKEN DB
Oikawa, Takeshi Browse this author
Hasegawa, Hideki Browse this author
Hashizume, Tamotsu Browse this author
Issue Date: 26-Jul-2006
Publisher: AVS Science & Technology of Materials, Interfaces, and Processing
Journal Title: Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures
Volume: 24
Issue: 4
Start Page: 2087
End Page: 2092
Publisher DOI: 10.1116/1.2214700
Abstract: Fundamental growth properties were investigated for the size-controlled selective MBE growth of AlGaN/GaN nanowires on the GaN (0001) prepatterned substrates both experimentally and theoretically. The lateral size of the present GaN nanowire was determined by two facet boundaries formed within AlGaN barrier layers. From the series of wire growth experiments, the growth selectivity and the measured angle of the facet boundary strongly depended on the Al composition and the initial crystalline facets of the mesa patterned templates. The experimental evolution of the cross-sectional structures was well reproduced by a computer simulation based on the phenomenological growth model where the slope angle dependence of lifetime of adatoms was taken into account. The lateral width of present nanowires could be kinetically controlled by the growth conditions and the supply thickness of AlGaN layers.
Type: article
URI: http://hdl.handle.net/2115/14595
Appears in Collections:量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 佐藤 威友

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