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Selective molecular beam epitaxy growth of size- and position-controlled GaN/AlGaN nanowires on nonplanar (0001) substrates and its growth mechanism

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タイトル: Selective molecular beam epitaxy growth of size- and position-controlled GaN/AlGaN nanowires on nonplanar (0001) substrates and its growth mechanism
著者: Sato, Taketomo 著作を一覧する
Oikawa, Takeshi 著作を一覧する
Hasegawa, Hideki 著作を一覧する
Hashizume, Tamotsu 著作を一覧する
発行日: 2006年 7月26日
出版者: AVS Science & Technology of Materials, Interfaces, and Processing
誌名: Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures
巻: 24
号: 4
開始ページ: 2087
終了ページ: 2092
出版社 DOI: 10.1116/1.2214700
抄録: Fundamental growth properties were investigated for the size-controlled selective MBE growth of AlGaN/GaN nanowires on the GaN (0001) prepatterned substrates both experimentally and theoretically. The lateral size of the present GaN nanowire was determined by two facet boundaries formed within AlGaN barrier layers. From the series of wire growth experiments, the growth selectivity and the measured angle of the facet boundary strongly depended on the Al composition and the initial crystalline facets of the mesa patterned templates. The experimental evolution of the cross-sectional structures was well reproduced by a computer simulation based on the phenomenological growth model where the slope angle dependence of lifetime of adatoms was taken into account. The lateral width of present nanowires could be kinetically controlled by the growth conditions and the supply thickness of AlGaN layers.
資料タイプ: article
URI: http://hdl.handle.net/2115/14595
出現コレクション:雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

提供者: 佐藤 威友

 

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