Gate-controlled electron g factor in an InAs-inserted-channel In 0.53Ga 0.47As/In 0.52Al 0.48As heterostructure


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Please use this identifier to cite or link to this item:http://hdl.handle.net/2115/14675

Title:	Gate-controlled electron g factor in an InAs-inserted-channel In 0.53Ga 0.47As/In 0.52Al 0.48As heterostructure
Authors:	Nitta, Junsaku Browse this author
	Lin, Yiping Browse this author
	Akazaki, Tatsushi Browse this author
	Koga, Takaaki Browse this author →KAKEN DB
Issue Date:	2003
Publisher:	American Institute of Physics
Journal Title:	Applied Physics Letters
Volume:	83
Issue:	22
Start Page:	4565
End Page:	4567
Publisher DOI:	10.1063/1.1631082
Abstract:	The electron g factor in an InAs-inserted-channel In0.53Ga0.47As/In0.52Al0.48As heterostructure is studied by measuring the angle dependence of magnetotransport properties. The gate voltage dependence of the g factor is obtained from the coincidence method. The g-factor values are surprisingly smaller than the g-factor value of bulk InAs, and close to the bare g-factor value of In0.53Ga0.47As. A large change in the g factor is observed by applying the gate voltage. The gate voltage dependence is not simply explained by the energy dependence of the g factor. ©2003 American Institute of Physics.
Rights:	Copyright © 2003 American Institute of Physics
Relation:	http://apl.aip.org/apl/top.jsp
Type:	article
URI:	http://hdl.handle.net/2115/14675
Appears in Collections:	情報科学院・情報科学研究院 (Graduate School of Information Science and Technology / Faculty of Information Science and Technology) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 古賀貴亮

OAI-PMH ( junii2 , jpcoar_1.0 )

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