HUSCAP logo Hokkaido Univ. logo

Hokkaido University Collection of Scholarly and Academic Papers >
Research Center for Integrated Quantum Electronics >
Peer-reviewed Journal Articles, etc >

Large reduction of leakage currents in AlGaN Schottky diodes by a surface control process and its mechanism

Files in This Item:
JVSTB24-4.pdf883.51 kBPDFView/Open
Please use this identifier to cite or link to this item:

Title: Large reduction of leakage currents in AlGaN Schottky diodes by a surface control process and its mechanism
Authors: Kotani, Junji Browse this author
Kaneko, Masamitsu Browse this author
Hasegawa, Hideki Browse this author
Hashizume, Tamotsu Browse this author →KAKEN DB
Issue Date: Jul-2006
Publisher: AVS Science & Technology of Materials, Interfaces, and Processing
Journal Title: Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures
Volume: 24
Issue: 4
Start Page: 2148
End Page: 2155
Publisher DOI: 10.1116/1.2216722
Abstract: Leakage currents in AlGaN Schottky diodes were investigated systematically by using a rigorous computer simulation based on the thin surface barrier model taking account of unintentionally doped surface donors. The leakage currents in AlGaN Schottky diodes have stronger bias dependence and smaller temperature dependences as compared with those of GaN diodes. It was shown that these features were associated with shallow oxygen donors located near the AlGaN surface. Then, an attempt was made to remove oxygen and suppress leakage currents by a surface control process using an ultrathin Al layer and subsequent annealing. An in situ x-ray photoelectron spectroscopy analysis indicated the formation of Al2O3 layer during the surface control process, suggesting efficient gettering of oxygen from the surface. C-V analysis directly indicated the reduction of shallow donors by the surface control process. A remarkable reduction of reverse leakage currents of four to five orders of magnitude took place in large area AlGaN Schottky diodes after the application of the surface control process. This process also reduced leakage currents of the gate of the heterostructure field effect transistor device by more than one order of magnitude and increased temperature dependences of current. ©2006 American Vacuum Society
Type: article
Appears in Collections:量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 橋詰 保

Export metadata:

OAI-PMH ( junii2 , jpcoar )

MathJax is now OFF:


 - Hokkaido University