Grating-bicoupled plasmon-resonant terahertz emitter fabricated with GaAs-based heterostructure material systems


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Please use this identifier to cite or link to this item:http://hdl.handle.net/2115/17197

Title:	Grating-bicoupled plasmon-resonant terahertz emitter fabricated with GaAs-based heterostructure material systems
Authors:	Otsuji, Taiichi Browse this author
	Meziani, Yahya Moubarak Browse this author
	Hanabe, Mitsuhiro Browse this author
	Ishibashi, Takuma Browse this author
	Uno, Tomohiro Browse this author
Issue Date:	25-Dec-2006
Publisher:	American Institute of Physics
Journal Title:	Applied Physics Letters
Volume:	89
Issue:	26
Start Page:	263502
Publisher DOI:	10.1063/1.2410228
Abstract:	A grating-bicoupled plasmon-resonant terahertz emitter was fabricated using InGaP/InGaAs/GaAs heterostructure material systems. The device structure is based on a high-electron mobility transistor and incorporates doubly interdigitated grating gates that periodically localize the two-dimensional (2D) plasmon in 100 nm regions with a submicron interval. Photoexcited electrons, injected to the 2D plasmon cavities, extensively promoted the plasmon instability, resulting in observation of emission of terahertz electromagnetic radiation at room temperature. ©2006 American Institute of Physics
Rights:	Copyright © 2006 American Institute of Physics
Type:	article
URI:	http://hdl.handle.net/2115/17197
Appears in Collections:	量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 佐野栄一

OAI-PMH ( junii2 , jpcoar_1.0 )

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