Hokkaido University Collection of Scholarly and Academic Papers >
Graduate School of Science / Faculty of Science >
Peer-reviewed Journal Articles, etc >
Resistivity, carrier concentration, and carrier mobility of electrochemically deposited CdTe films
Title: | Resistivity, carrier concentration, and carrier mobility of electrochemically deposited CdTe films |
Authors: | Takahashi, Makoto Browse this author | Uosaki, Kohei Browse this author | Kita, Hideaki Browse this author | Yamaguchi, Shoji Browse this author |
Issue Date: | 15-Sep-1986 |
Publisher: | American Institute of Physics |
Journal Title: | Journal of Applied Physics |
Volume: | 60 |
Issue: | 6 |
Start Page: | 2046 |
End Page: | 2049 |
Publisher DOI: | 10.1063/1.337207 |
Abstract: | The electrical type, resistivity, and donor or acceptor concentration of CdTe films deposited electrochemically at various potentials were measured. The carrier mobilities of the films were determined from these results. The deposition potential dependence of the mobility was small and the deposition potential dependence of the resistivity was mainly controlled by the deposition potential dependence of the donor or acceptor concentration. The carrier mobilities were very small compared with those in single crystals due to the scattering of the carriers at grain boundaries. Journal of Applied Physics is copyrighted by The American Institute of Physics.
The electrical type, resistivity, and donor or acceptor concentration of CdTe films deposited electrochemically at various potentials were measured. The carrier mobilities of the films were determined from these results. The deposition potential dependence of the mobility was small and the deposition potential dependence of the resistivity was mainly controlled by the deposition potential dependence of the donor or acceptor concentration. The carrier mobilities were very small compared with those in single crystals due to the scattering of the carriers at grain boundaries. Journal of Applied Physics is copyrighted by The American Institute of Physics. |
Rights: | Copyright © 1986 American Institute of Physics |
Type: | article |
URI: | http://hdl.handle.net/2115/20576 |
Appears in Collections: | 理学院・理学研究院 (Graduate School of Science / Faculty of Science) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
|
Submitter: 魚崎 浩平
|