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Multipath-switching device utilizing a GaAs-based multiterminal nanowire junction with size-controlled dual Schottky wrap gates

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Please use this identifier to cite or link to this item:http://hdl.handle.net/2115/20585

Title: Multipath-switching device utilizing a GaAs-based multiterminal nanowire junction with size-controlled dual Schottky wrap gates
Authors: Kasai, Seiya Browse this author →KAKEN DB
Nakamura, Tatsuya Browse this author
Shiratori, Yuta Browse this author
Issue Date: 14-May-2007
Publisher: American Institute of Physics
Journal Title: Applied Physics Letters
Volume: 90
Issue: 20
Start Page: 203504
Publisher DOI: 10.1063/1.2739085
Abstract: A multipath-switching device using a multiterminal nanowire junction with size-controlled dual gates is proposed and demonstrated experimentally. The device switches a number of output terminals according to multiple-valued input voltages for electrons entering from a root terminal. The switching function is implemented by dual gating on multiple nanowires with different threshold voltages Vth. Systematic Vth shift is made by changing gate lengths in nanometer scale. A triple-path-switching device is fabricated using AlGaAs/GaAs etched nanowires and nanometer-scale Schottky wrap gates. Its correct operation is confirmed at room temperature. Obtained results are explained by a simple analytical model.
Rights: Copyright © 2007 American Institute of Physics
Type: article
URI: http://hdl.handle.net/2115/20585
Appears in Collections:量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 葛西 誠也

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