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Multipath-switching device utilizing a GaAs-based multiterminal nanowire junction with size-controlled dual Schottky wrap gates
| Title: | Multipath-switching device utilizing a GaAs-based multiterminal nanowire junction with size-controlled dual Schottky wrap gates |
| Authors: | Kasai, Seiya Browse this author →KAKEN DB | | Nakamura, Tatsuya Browse this author | | Shiratori, Yuta Browse this author |
| Issue Date: | 14-May-2007 |
| Publisher: | American Institute of Physics |
| Journal Title: | Applied Physics Letters |
| Volume: | 90 |
| Issue: | 20 |
| Start Page: | 203504 |
| Publisher DOI: | 10.1063/1.2739085 |
| Abstract: | A multipath-switching device using a multiterminal nanowire junction with size-controlled dual gates is proposed and demonstrated experimentally. The device switches a number of output terminals according to multiple-valued input voltages for electrons entering from a root terminal. The switching function is implemented by dual gating on multiple nanowires with different threshold voltages Vth. Systematic Vth shift is made by changing gate lengths in nanometer scale. A triple-path-switching device is fabricated using AlGaAs/GaAs etched nanowires and nanometer-scale Schottky wrap gates. Its correct operation is confirmed at room temperature. Obtained results are explained by a simple analytical model. |
| Rights: | Copyright © 2007 American Institute of Physics |
| Type: | article |
| URI: | http://hdl.handle.net/2115/20585 |
| Appears in Collections: | 量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 葛西 誠也
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