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Electrical and deep-level characterization of GaP xNx grown by gas-source molecular beam epitaxy
| Title: | Electrical and deep-level characterization of GaP xNx grown by gas-source molecular beam epitaxy |
| Authors: | Kaneko, M. Browse this author | | Hashizume, T. Browse this author →KAKEN DB | | Odnoblyudov, V. A. Browse this author | | Tu, C. W. Browse this author |
| Issue Date: | 15-May-2007 |
| Publisher: | American Institute of Physics |
| Journal Title: | Journal of Applied Physics |
| Volume: | 101 |
| Issue: | 10 |
| Start Page: | 103707 |
| Publisher DOI: | 10.1063/1.2732451 |
| Abstract: | We have investigated electrical properties and deep levels of n-GaP1−xNx (x=0%−0.62%) grown on (100) n-GaP substrates by gas source molecular beam epitaxy. The x-ray photoelectron spectroscopy results showed no significant effects on the chemical bonding status of the host Ga-P matrix by the incorporation of small amounts of N atoms. In the Raman spectra, the zone-edge GaP-like vibration was observed at 387 cm−1, originating from alloy disorder or local distortion of the GaP1−xNx lattice. The electrical properties of the GaP1−xNx surfaces were characterized using a Schottky contact structure. An ideality factor of 1.10–1.15 and a Schottky barrier height of 1.1 eV were obtained from the current-voltage characteristics of Ni/GaP1−xNx diodes, indicating good interface quality. The thermal admittance spectroscopy clearly detected the Si donor level with an activation energy of 84±4 meV in GaP and GaP1−xNx. For the GaP1−xNx samples, we observed deep levels probably associated with N-induced defects such as N-N pairs, N clusters, and an N-containing complexes. ©2007 American Institute of Physics |
| Rights: | Copyright © 2007 American Institute of Physics |
| Type: | article |
| URI: | http://hdl.handle.net/2115/22358 |
| Appears in Collections: | 量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 橋詰 保
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