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Electrical and deep-level characterization of GaP xNx grown by gas-source molecular beam epitaxy

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Title: Electrical and deep-level characterization of GaP xNx grown by gas-source molecular beam epitaxy
Authors: Kaneko, M. Browse this author
Hashizume, T. Browse this author →KAKEN DB
Odnoblyudov, V. A. Browse this author
Tu, C. W. Browse this author
Issue Date: 15-May-2007
Publisher: American Institute of Physics
Journal Title: Journal of Applied Physics
Volume: 101
Issue: 10
Start Page: 103707
Publisher DOI: 10.1063/1.2732451
Abstract: We have investigated electrical properties and deep levels of n-GaP1−xNx (x=0%−0.62%) grown on (100) n-GaP substrates by gas source molecular beam epitaxy. The x-ray photoelectron spectroscopy results showed no significant effects on the chemical bonding status of the host Ga-P matrix by the incorporation of small amounts of N atoms. In the Raman spectra, the zone-edge GaP-like vibration was observed at 387 cm−1, originating from alloy disorder or local distortion of the GaP1−xNx lattice. The electrical properties of the GaP1−xNx surfaces were characterized using a Schottky contact structure. An ideality factor of 1.10–1.15 and a Schottky barrier height of 1.1 eV were obtained from the current-voltage characteristics of Ni/GaP1−xNx diodes, indicating good interface quality. The thermal admittance spectroscopy clearly detected the Si donor level with an activation energy of 84±4 meV in GaP and GaP1−xNx. For the GaP1−xNx samples, we observed deep levels probably associated with N-induced defects such as N-N pairs, N clusters, and an N-containing complexes. ©2007 American Institute of Physics
Rights: Copyright © 2007 American Institute of Physics
Type: article
Appears in Collections:量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 橋詰 保

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