Vanishing of inhomogeneous spin relaxation in InAs-based field-effect transistor structures


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Please use this identifier to cite or link to this item:http://hdl.handle.net/2115/25418

Title:	Vanishing of inhomogeneous spin relaxation in InAs-based field-effect transistor structures
Authors:	Ohno, Munekazu Browse this author
Authors:	Yoh, Kanji Browse this author →KAKEN DB
Issue Date:	15-Jun-2007
Publisher:	American Physical Society
Journal Title:	Physical Review B
Volume:	75
Issue:	24
Start Page:	241308
Publisher DOI:	10.1103/PhysRevB.75.241308
Abstract:	The D'yakonov-Perel' spin relaxation process in the (001) InAs quantum well system is studied based on Monte Carlo (MC) simulation. The present space-resolved MC analysis demonstrates that the relaxation of spins oriented in any axes is totally suppressed with equal strength of Rashba and Dresselhaus effects, which is in marked contrast with the spin relaxation anisotropy reported previously in time-resolved analyses. Our calculation also shows a substantial contribution of the cubic term of the wave number vector in the Dresselhaus model onto the spatial spin distribution.
Rights:	Copyright © 2007 American Physical Society
Relation:	http://www.aps.org/
Type:	article
URI:	http://hdl.handle.net/2115/25418
Appears in Collections:	量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 陽完治

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