Reduced interface reaction during the epitaxial Fe growth on InAs for high efficiency spin injection

Yoh, Kanji; Ohno, Hiroshi; Sueoka, Kazuhisa; Ramsteiner, Manfred E.

doi:10.1116/1.1755711


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Reduced interface reaction during the epitaxial Fe growth on InAs for high efficiency spin injection

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Please use this identifier to cite or link to this item:http://hdl.handle.net/2115/28637

Title:	Reduced interface reaction during the epitaxial Fe growth on InAs for high efficiency spin injection
Authors:	Yoh, Kanji Browse this author →KAKEN DB
	Ohno, Hiroshi Browse this author
	Sueoka, Kazuhisa Browse this author
	Ramsteiner, Manfred E. Browse this author
Issue Date:	May-2004
Publisher:	American Vacuum Society
Journal Title:	Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
Volume:	22
Issue:	3
Start Page:	1432
End Page:	1435
Publisher DOI:	10.1116/1.1755711
Abstract:	We have investigated Fe/InAs interfaces for two different growth temperatures of Fe and the effect on the spin injection properties through an Fe/InAs junction. Secondary ion mass spectroscopy and transmission electron microscopy studies of the Fe/InAs interfaces revealed that Fe films grown at 175 °C clearly suffer from increased reaction and out-diffusion of semiconductor constituents compared to those grown at 23 °C. The lower temperature samples showed an increased degree of spin polarization of 18%–20% which translates to 36%–40% of spin injection efficiency assuming selection rules between heavy and light holes in the p-type InAs substrate. It is close to the spin polarization of 40%–45% in an Fe spin injector itself. ©2004 American Vacuum Society.
Rights:	©2004 American Vacuum Society
Type:	article
URI:	http://hdl.handle.net/2115/28637
Appears in Collections:	量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 陽完治

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