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Reduced interface reaction during the epitaxial Fe growth on InAs for high efficiency spin injection

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Title: Reduced interface reaction during the epitaxial Fe growth on InAs for high efficiency spin injection
Authors: Yoh, Kanji Browse this author →KAKEN DB
Ohno, Hiroshi Browse this author
Sueoka, Kazuhisa Browse this author
Ramsteiner, Manfred E. Browse this author
Issue Date: May-2004
Publisher: American Vacuum Society
Journal Title: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
Volume: 22
Issue: 3
Start Page: 1432
End Page: 1435
Publisher DOI: 10.1116/1.1755711
Abstract: We have investigated Fe/InAs interfaces for two different growth temperatures of Fe and the effect on the spin injection properties through an Fe/InAs junction. Secondary ion mass spectroscopy and transmission electron microscopy studies of the Fe/InAs interfaces revealed that Fe films grown at 175 °C clearly suffer from increased reaction and out-diffusion of semiconductor constituents compared to those grown at 23 °C. The lower temperature samples showed an increased degree of spin polarization of 18%–20% which translates to 36%–40% of spin injection efficiency assuming selection rules between heavy and light holes in the p-type InAs substrate. It is close to the spin polarization of 40%–45% in an Fe spin injector itself. ©2004 American Vacuum Society.
Rights: ©2004 American Vacuum Society
Type: article
Appears in Collections:量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 陽 完治

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