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Mechanism of surface conduction in the vicinity of Schottky gates on AlGaN/GaN heterostructures
| Title: | Mechanism of surface conduction in the vicinity of Schottky gates on AlGaN/GaN heterostructures |
| Authors: | Kotani, Junji Browse this author | | Tajima, Masafumi Browse this author | | Kasai, Seiya Browse this author →KAKEN DB | | Hashizume, Tamotsu Browse this author →KAKEN DB |
| Issue Date: | 27-Aug-2007 |
| Publisher: | American Institute of Physics |
| Journal Title: | Applied Physics Letters |
| Volume: | 91 |
| Issue: | 9 |
| Start Page: | 093501 |
| Publisher DOI: | 10.1063/1.2775834 |
| Abstract: | Lateral surface leakage current (Is) on an AlGaN/GaN heterostructure was systematically investigated by using a two-parallel gate structure with a gap distance (LGG) of 200 nm–5 µm. The surface current Is systematically increased as LGG decreased. A simple resistive layer conduction that should show 1/LGG dependence failed to account for the drastic increase in Is when LGG was reduced to less than 1 µm. However, no dependence on LGG was seen in vertical current that flows in the Schottky interface. The Is showed a clear temperature dependence proportional to exp(−T −1/3), indicating two-dimensional variable-range hopping through high-density surface electronic states in AlGaN. A pronounced reduction in surface current of almost four orders of magnitude was observed in a sample with SiNx passivation. ©2007 American Institute of Physics |
| Rights: | Copyright 2007 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. |
| Relation: | http://apl.aip.org/apl/ |
| Type: | article |
| URI: | http://hdl.handle.net/2115/29892 |
| Appears in Collections: | 量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 橋詰 保
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