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Mechanism of surface conduction in the vicinity of Schottky gates on AlGaN/GaN heterostructures

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Title: Mechanism of surface conduction in the vicinity of Schottky gates on AlGaN/GaN heterostructures
Authors: Kotani, Junji Browse this author
Tajima, Masafumi Browse this author
Kasai, Seiya Browse this author →KAKEN DB
Hashizume, Tamotsu Browse this author →KAKEN DB
Issue Date: 27-Aug-2007
Publisher: American Institute of Physics
Journal Title: Applied Physics Letters
Volume: 91
Issue: 9
Start Page: 093501
Publisher DOI: 10.1063/1.2775834
Abstract: Lateral surface leakage current (Is) on an AlGaN/GaN heterostructure was systematically investigated by using a two-parallel gate structure with a gap distance (LGG) of 200 nm–5 µm. The surface current Is systematically increased as LGG decreased. A simple resistive layer conduction that should show 1/LGG dependence failed to account for the drastic increase in Is when LGG was reduced to less than 1 µm. However, no dependence on LGG was seen in vertical current that flows in the Schottky interface. The Is showed a clear temperature dependence proportional to exp(−T −1/3), indicating two-dimensional variable-range hopping through high-density surface electronic states in AlGaN. A pronounced reduction in surface current of almost four orders of magnitude was observed in a sample with SiNx passivation. ©2007 American Institute of Physics
Rights: Copyright 2007 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
Type: article
Appears in Collections:量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 橋詰 保

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