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Characterization of Fabry-Pérot microcavity modes in GaAs nanowires fabricated by selective-area metal organic vapor phase epitaxy

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Please use this identifier to cite or link to this item:http://hdl.handle.net/2115/30183

Title: Characterization of Fabry-Pérot microcavity modes in GaAs nanowires fabricated by selective-area metal organic vapor phase epitaxy
Authors: Hua, Bin Browse this author
Motohisa, Junichi Browse this author →KAKEN DB
Ding, Ying Browse this author
Hara, Shinjiroh Browse this author →KAKEN DB
Fukui, Takashi Browse this author →KAKEN DB
Issue Date: 24-Sep-2007
Publisher: American Institute of Physics
Journal Title: Applied Physics Letters
Volume: 91
Issue: 13
Start Page: 131112
Publisher DOI: 10.1063/1.2787895
Abstract: The authors present the formation of Fabry-Pérot cavity in single GaAs nanowire prepared by selective-area metal organic vapor phase epitaxy. The grown nanowires with hexagonal cross section are highly uniform and vertically oriented. Microphotoluminescence measurements of single GaAs nanowire exhibit periodic peaks in the intensity, which are suggestive of the longitudinal modes of a Fabry-Pérot cavity. The cavity is formed along the length of the nanowire and the (111) facets of both ends act as reflecting mirrors. Additionally, optical waveguides in GaAs nanowires were also observed. ©2007 American Institute of Physics
Rights: Copyright 2007 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
Relation: http://apl.aip.org/apl/
Type: article
URI: http://hdl.handle.net/2115/30183
Appears in Collections:量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 華 斌

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