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Formation of Thin Native Oxide Layer on n-GaN by Electrochemical Process in Mixed Solution with Glycol and Water

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Title: Formation of Thin Native Oxide Layer on n-GaN by Electrochemical Process in Mixed Solution with Glycol and Water
Authors: Shiozaki, Nanako Browse this author
Sato, Taketomo Browse this author →KAKEN DB
Hashizume, Tamotsu Browse this author →KAKEN DB
Keywords: GaN
oxide
electrochemical
anodic oxidation
XPS
Issue Date: Apr-2007
Publisher: Japan Society of Applied Physics
Journal Title: Japanese Journal of Applied Physics. Pt. 1, Regular papers, short notes & review papers
Volume: 46
Issue: 4A
Start Page: 1471
End Page: 1473
Publisher DOI: 10.1143/JJAP.46.1471
Abstract: In this paper, we report on the feasibility of oxidizing n-GaN by an electrochemical process in a mixture containing an aqueous solution of tartaric acid and propylene glycol. Photons generated by UV illumination were supplied at the electrolyte-GaN interface during the oxidation process. In the constant-voltage mode, X-ray photoelectron spectroscopy analysis revealed that relatively thick Ga oxide layer formed on the n-GaN surface. However, the oxide surface was very rough. In addition, we found metallic Ga components in the oxide layer or at the oxide-GaN interface for longer oxidation times. On the other hand, a thin Ga2O3 layer with a smooth surface was grown by a constant-current process.
Rights: Copyright © 2007 The Japan Society of Applied Physics
Type: article (author version)
URI: http://hdl.handle.net/2115/33073
Appears in Collections:量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 橋詰 保

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