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Formation of Thin Native Oxide Layer on n-GaN by Electrochemical Process in Mixed Solution with Glycol and Water
| Title: | Formation of Thin Native Oxide Layer on n-GaN by Electrochemical Process in Mixed Solution with Glycol and Water |
| Authors: | Shiozaki, Nanako Browse this author | | Sato, Taketomo Browse this author →KAKEN DB | | Hashizume, Tamotsu Browse this author →KAKEN DB |
| Keywords: | GaN | | oxide | | electrochemical | | anodic oxidation | | XPS |
| Issue Date: | Apr-2007 |
| Publisher: | Japan Society of Applied Physics |
| Journal Title: | Japanese Journal of Applied Physics. Pt. 1, Regular papers, short notes & review papers |
| Volume: | 46 |
| Issue: | 4A |
| Start Page: | 1471 |
| End Page: | 1473 |
| Publisher DOI: | 10.1143/JJAP.46.1471 |
| Abstract: | In this paper, we report on the feasibility of oxidizing n-GaN by an electrochemical process in a mixture containing an aqueous solution of tartaric acid and propylene glycol. Photons generated by UV illumination were supplied at the electrolyte-GaN interface during the oxidation process. In the constant-voltage mode, X-ray photoelectron spectroscopy analysis revealed that relatively thick Ga oxide layer formed on the n-GaN surface. However, the oxide surface was very rough. In addition, we found metallic Ga components in the oxide layer or at the oxide-GaN interface for longer oxidation times. On the other hand, a thin Ga2O3 layer with a smooth surface was grown by a constant-current process. |
| Rights: | Copyright © 2007 The Japan Society of Applied Physics |
| Type: | article (author version) |
| URI: | http://hdl.handle.net/2115/33073 |
| Appears in Collections: | 量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 橋詰 保
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