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Surface Control Process of AlGaN for Suppression of Gate Leakage Currents in AlGaN/GaN Heterostructure Field Effect Transistors
| Title: | Surface Control Process of AlGaN for Suppression of Gate Leakage Currents in AlGaN/GaN Heterostructure Field Effect Transistors |
| Authors: | Hashizume, Tamotsu Browse this author →KAKEN DB | | Kotani, Junji Browse this author | | Basile, Alberto Browse this author | | Kaneko, Masamitsu Browse this author |
| Keywords: | AlGaN | | GaN | | gate leakage current | | tunnel | | surface control | | XPS |
| Issue Date: | Feb-2006 |
| Publisher: | Japan Society of Applied Physics |
| Journal Title: | Japanese Journal of Applied Physics. Pt. 2, Letters & express letters |
| Volume: | 45 |
| Issue: | 4-7 |
| Start Page: | L111 |
| End Page: | L113 |
| Publisher DOI: | 10.1143/JJAP.45.L111 |
| Abstract: | We proposed a surface control process for suppressing the tunneling leakage of Schottky gates on AlGaN/GaN heterostructures. For the recovery of nitrogen-vacancy-related defects and reduction in the amount of oxygen impurities at the AlGaN surface, the process consisted of nitrogen radical treatment, the deposition of an ultrathin Al layer, UHV annealing and finally the removal of the Al layer. Ni/Au Schottky gates fabricated on processed AlGaN surfaces showed pronounced reduction in leakage current and a clear temperature dependence of I-V characteristics, indicating the effective suppression of tunneling leakage in current transport through AlGaN Schottky interfaces. |
| Rights: | Copyright © 2006 The Japan Society of Applied Physics |
| Type: | article (author version) |
| URI: | http://hdl.handle.net/2115/33075 |
| Appears in Collections: | 量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 橋詰 保
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