Solid-Phase Diffusion of Carbon into GaN Using SiNx/CNx/GaN Structure

Kimura, Takeshi; Ootomo, Shinya; Nomura, Takehiko; Yoshida, Seikoh; Hashizume, Tamotsu

doi:10.1143/JJAP.46.L224


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Solid-Phase Diffusion of Carbon into GaN Using SiNx/CNx/GaN Structure

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Please use this identifier to cite or link to this item:http://hdl.handle.net/2115/33076

Title:	Solid-Phase Diffusion of Carbon into GaN Using SiNx/CNx/GaN Structure
Authors:	Kimura, Takeshi Browse this author
	Ootomo, Shinya Browse this author
	Nomura, Takehiko Browse this author
	Yoshida, Seikoh Browse this author
	Hashizume, Tamotsu Browse this author →KAKEN DB
Keywords:	doping
	carbon
	diffusion
	GaN
	CN
	SiN
	XPS
	ECR-CVD
Issue Date:	Mar-2007
Publisher:	Japan Society of Applied Physics
Journal Title:	Japanese Journal of Applied Physics. Pt. 2, Letters & express letters
Volume:	46
Issue:	10
Start Page:	L224
End Page:	L226
Publisher DOI:	10.1143/JJAP.46.L224
Abstract:	We performed a feasibility study on the solid-phase diffusion of carbon into GaN using a SiNx/CNx/GaN structure prepared by electron-cyclotron-resonance-assisted chemical vapor deposition. An X-ray photoelectron spectroscopy study on the CNx layer deposited on GaN showed that its energy positions and spectrum features are very close to those of a C-N bond, and the N composition was estimated to be 24 %, indicating a highly C-rich layer. No degradation in the chemical properties of the GaN surface was found after the diffusion process at 1000 ℃. A secondary ion mass spectrometry result clearly showed a diffusion of carbon into GaN. We also observed an increase in resistivity for the C-diffused GaN layer.
Rights:	Copyright © 2007 The Japan Society of Applied Physics
Type:	article (author version)
URI:	http://hdl.handle.net/2115/33076
Appears in Collections:	量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 橋詰保

OAI-PMH ( junii2 , jpcoar_1.0 )

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