HUSCAP logo Hokkaido Univ. logo

Hokkaido University Collection of Scholarly and Academic Papers >
Research Center for Integrated Quantum Electronics >
Peer-reviewed Journal Articles, etc >

Solid-Phase Diffusion of Carbon into GaN Using SiNx/CNx/GaN Structure

Files in This Item:
JJAP07-kimura.pdf505.36 kBPDFView/Open
Please use this identifier to cite or link to this item:

Title: Solid-Phase Diffusion of Carbon into GaN Using SiNx/CNx/GaN Structure
Authors: Kimura, Takeshi Browse this author
Ootomo, Shinya Browse this author
Nomura, Takehiko Browse this author
Yoshida, Seikoh Browse this author
Hashizume, Tamotsu Browse this author →KAKEN DB
Keywords: doping
Issue Date: Mar-2007
Publisher: Japan Society of Applied Physics
Journal Title: Japanese Journal of Applied Physics. Pt. 2, Letters & express letters
Volume: 46
Issue: 10
Start Page: L224
End Page: L226
Publisher DOI: 10.1143/JJAP.46.L224
Abstract: We performed a feasibility study on the solid-phase diffusion of carbon into GaN using a SiNx/CNx/GaN structure prepared by electron-cyclotron-resonance-assisted chemical vapor deposition. An X-ray photoelectron spectroscopy study on the CNx layer deposited on GaN showed that its energy positions and spectrum features are very close to those of a C-N bond, and the N composition was estimated to be 24 %, indicating a highly C-rich layer. No degradation in the chemical properties of the GaN surface was found after the diffusion process at 1000 ℃. A secondary ion mass spectrometry result clearly showed a diffusion of carbon into GaN. We also observed an increase in resistivity for the C-diffused GaN layer.
Rights: Copyright © 2007 The Japan Society of Applied Physics
Type: article (author version)
Appears in Collections:量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 橋詰 保

Export metadata:

OAI-PMH ( junii2 , jpcoar )

MathJax is now OFF:


 - Hokkaido University