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Hokkaido University Collection of Scholarly and Academic Papers >
Graduate School of Information Science and Technology / Faculty of Information Science and Technology >
Peer-reviewed Journal Articles, etc >
Novel Quantum Wire Branch-Switches for Binary Decision Diagram Logic Architecture Utilizing Schottky Wrap-Gate Control of GaAs/AlGaAs Nanowires
| Title: | Novel Quantum Wire Branch-Switches for Binary Decision Diagram Logic Architecture Utilizing Schottky Wrap-Gate Control of GaAs/AlGaAs Nanowires |
| Authors: | Yumoto, Miki Browse this author | | Kasai, Seiya Browse this author →KAKEN DB | | Hasegawa, Hideki Browse this author |
| Keywords: | binary decision diagram (BDD) | | quantum wire (QWR) | | Schottky wrap gate (WPG) | | path switching |
| Issue Date: | Apr-2002 |
| Publisher: | Japan Society of Applied Physics |
| Journal Title: | Japanese Journal of Applied Physics. Pt. 1, Regular papers, short notes & review papers |
| Volume: | 41 |
| Issue: | 4B |
| Start Page: | 2671 |
| End Page: | 2674 |
| Publisher DOI: | 10.1143/JJAP.41.2671 |
| Abstract: | A novel binary decision diagram (BDD) node device based on wrap-gate (WPG) control of AlGaAs/GaAs nanowires is described and fabricated, and its basic operation is characterized. The node device consists of one entry-nanowire branch and two exit-nanowire branches where each of two exit-branches is switched by a Schottky WPG in a complimentary fashion so as to realize path switching for electrons. Basic branch switches as well as BDD node devices were fabricated on AlGaAs/GaAs nanowires formed by electron beam lithography and wet chemical etching of molecular beam epitaxy (MBE)-grown heterostructures. A detailed analysis of gate control characteristics was carried out by magneto tran sport measurements. A three-dimensional potential simulation showed that Fermi level pinning on the semiconductor free surface should be carefully taken into consideration for accurate device design. The branch-switch exhibited excellent gate control from low temperatures up to room temperature. showing clear conductance quantization at low temperatures, The fabricated BDD node device realized clear path switching from low temperatures up to room temperature. |
| Rights: | Copyright © 2002 The Japan Society of Applied Physics |
| Type: | article (author version) |
| URI: | http://hdl.handle.net/2115/33082 |
| Appears in Collections: | 情報科学院・情報科学研究院 (Graduate School of Information Science and Technology / Faculty of Information Science and Technology) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 葛西 誠也
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