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Hokkaido University Collection of Scholarly and Academic Papers >
Graduate School of Information Science and Technology / Faculty of Information Science and Technology >
Peer-reviewed Journal Articles, etc >
GaAs-Based Single Electron Transistors and Logic Inverters Utilizing Schottky Wrap-Gate Controlled Quantum Wires and Dots
| Title: | GaAs-Based Single Electron Transistors and Logic Inverters Utilizing Schottky Wrap-Gate Controlled Quantum Wires and Dots |
| Authors: | Kasai, Seiya Browse this author →KAKEN DB | | Hasegawa, Hideki Browse this author |
| Keywords: | single electron transistor (SET) | | single electron logic inverter | | Schottky wrap gate (WPG) | | GaAs | | transfer gain | | quantum dot | | quantum wire |
| Issue Date: | Mar-2001 |
| Publisher: | Japan Society of Applied Physics |
| Journal Title: | Japanese Journal of Applied Physics. Pt. 1, Regular papers, short notes & review papers |
| Volume: | 40 |
| Issue: | 3B |
| Start Page: | 2029 |
| End Page: | 2032 |
| Publisher DOI: | 10.1143/JJAP.40.2029 |
| Abstract: | GaAs-based single electron transistors (SETs) and their logic inverters were successfully designed and fabricated using a Schottky wrap-gate (WPG) quantum wire and dot formation technology. Three-gate WPG SETs, which have two tunnel barrier gates and center gate for a quantum dot-potential control, showed voltage gains larger than unity due to tight dot-potential control of the center WPG. The conductance peak position of the SET could be systematically controlled by changing the tunnel-barrier-control WPG voltages. A resistive-load single electron inverter utilizing 3-gate WPG SET as a driver and a WPG quantum wire transistor as an active load was fabricated and it showed a proper inverter operation at 1.6 K and realized a logic transfer gain of larger than unity (1.3) for the first time in III-V semiconductor-based SET inverters. A III-V semiconductor-based complimentary inverter utilizing two 3-gate WPG SETs was also successfully fabricated for the first time and the inverter operation was also confirmed at 1.7 K. |
| Rights: | Copyright © 2001 The Japan Society of Applied Physics |
| Type: | article (author version) |
| URI: | http://hdl.handle.net/2115/33084 |
| Appears in Collections: | 情報科学院・情報科学研究院 (Graduate School of Information Science and Technology / Faculty of Information Science and Technology) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 葛西 誠也
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