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The Strong Correlation between Interface Microstructure and Barrier Height in Pt/n-InP Schottky Contacts Formed by an In Situ Electrochemical Process
Title: | The Strong Correlation between Interface Microstructure and Barrier Height in Pt/n-InP Schottky Contacts Formed by an In Situ Electrochemical Process |
Authors: | Sato, Taketomo Browse this author | Kaneshiro, Chinami Browse this author | Hasegawa, Hideki Browse this author |
Keywords: | Schottky barrier | electrochemical process | pulse plating | surface morphology | Pt | InP | SEM | I-V | C-V | DIGS model |
Issue Date: | Feb-1999 |
Publisher: | Japan Society of Applied Physics |
Journal Title: | Japanese Journal of Applied Physics. Pt. 1, Regular papers, short notes & review papers |
Volume: | 38 |
Issue: | 2B |
Start Page: | 1103 |
End Page: | 1106 |
Publisher DOI: | 10.1143/JJAP.38.1103 |
Abstract: | In order to investigate the correlation between the microstructure of a metal/semiconductor (M/S) interface and the Schottky barrier height (SBH), Pt Schottky contacts were formed on n-type InP by an in situ electrochemical process under various electrochemical conditions; they were then investigated using scanning electron microscopy (SEM), current-voltage (I-V) and capacitance-voltage (C-V) measurements. Electrodeposition resulted in the formation of arrays of nanometer-sized Pt particles whose distribution strongly depended on electrochemical conditions. The SBH values exhibited a strong correlation with the particle distribution, leading to a high SBH value of 0.86 eV under the condition of the most uniform distribution of the smallest particles. The result is discussed from the viewpoint of the disorder-induced gap state (DIGS) model. |
Rights: | Copyright © 1999 The Japan Society of Applied Physics |
Type: | article (author version) |
URI: | http://hdl.handle.net/2115/33089 |
Appears in Collections: | 量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 佐藤 威友
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