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The Strong Correlation between Interface Microstructure and Barrier Height in Pt/n-InP Schottky Contacts Formed by an In Situ Electrochemical Process

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Title: The Strong Correlation between Interface Microstructure and Barrier Height in Pt/n-InP Schottky Contacts Formed by an In Situ Electrochemical Process
Authors: Sato, Taketomo Browse this author
Kaneshiro, Chinami Browse this author
Hasegawa, Hideki Browse this author
Keywords: Schottky barrier
electrochemical process
pulse plating
surface morphology
Pt
InP
SEM
I-V
C-V
DIGS model
Issue Date: Feb-1999
Publisher: Japan Society of Applied Physics
Journal Title: Japanese Journal of Applied Physics. Pt. 1, Regular papers, short notes & review papers
Volume: 38
Issue: 2B
Start Page: 1103
End Page: 1106
Publisher DOI: 10.1143/JJAP.38.1103
Abstract: In order to investigate the correlation between the microstructure of a metal/semiconductor (M/S) interface and the Schottky barrier height (SBH), Pt Schottky contacts were formed on n-type InP by an in situ electrochemical process under various electrochemical conditions; they were then investigated using scanning electron microscopy (SEM), current-voltage (I-V) and capacitance-voltage (C-V) measurements. Electrodeposition resulted in the formation of arrays of nanometer-sized Pt particles whose distribution strongly depended on electrochemical conditions. The SBH values exhibited a strong correlation with the particle distribution, leading to a high SBH value of 0.86 eV under the condition of the most uniform distribution of the smallest particles. The result is discussed from the viewpoint of the disorder-induced gap state (DIGS) model.
Rights: Copyright © 1999 The Japan Society of Applied Physics
Type: article (author version)
URI: http://hdl.handle.net/2115/33089
Appears in Collections:量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 佐藤 威友

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