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Electrochemical Etching of Indium Phosphide Surfaces Studied by Voltammetry and Scanned Probe Microscopes

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Title: Electrochemical Etching of Indium Phosphide Surfaces Studied by Voltammetry and Scanned Probe Microscopes
Authors: Kaneshiro, Chinami Browse this author
Sato, Taketomo Browse this author
Hasegawa, Hideki Browse this author
Keywords: InP
electrochemical process
scanned probe microscope
Issue Date: Feb-1999
Publisher: Japan Society of Applied Physics
Journal Title: Japanese Journal of Applied Physics. Pt. 1, Regular papers, short notes & review papers
Volume: 38
Issue: 2B
Start Page: 1147
End Page: 1152
Publisher DOI: 10.1143/JJAP.38.1147
Abstract: Using voltammetry, X-ray photoemission spectroscopy (XPS), in situ electrochemical scanning tunneling microscopy (STM), ex situ atomic force microscopy (AFM) and scanning electron microscope (SEM) measurements, electrochemical etching modes for n-InP surfaces were investigated and optimized for uniform and controlled etching in an HCl electrolyte. The voltammograms indicated the presence of active and passive regions. The surfaces obtained in the active region were clean and featureless with an rms roughness of 1.8 nm. On the other hand, the oxide covered surfaces obtained in the passive region were nonuniform and porous. Etching characteristics of the d.c. photo-anodic mode and the pulsed avalanche mode were then investigated and compared. Both modes were found to be highly controllable and produced uniform and clean surfaces, consuming eight holes per molecule of InP. In particular, the pulsed avalanche etching mode realized an extremely high etch depth controllability of 3x10^-5 nm/pulse.
Rights: Copyright © 1999 The Japan Society of Applied Physics
Type: article (author version)
Appears in Collections:量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 佐藤 威友

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