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Formation of Size- and Position-Controlled Nanometer Size Pt Dots on GaAs and InP Substrates by Pulsed Electrochemical Deposition

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Please use this identifier to cite or link to this item:http://hdl.handle.net/2115/33091

Title: Formation of Size- and Position-Controlled Nanometer Size Pt Dots on GaAs and InP Substrates by Pulsed Electrochemical Deposition
Authors: Sato, Taketomo Browse this author
Kaneshiro, Chinami Browse this author
Okada, Hiroshi Browse this author
Hasegawa, Hideki Browse this author
Keywords: metal dot array
Schottky contact
electrochemical process
electron-beam lithography
Pt
InP
GaAs
SEM
AFM
conductive probe
Issue Date: Apr-1999
Publisher: Japan Society of Applied Physics
Journal Title: Japanese Journal of Applied Physics. Pt. 1, Regular papers, short notes & review papers
Volume: 38
Issue: 4B
Start Page: 2448
End Page: 2452
Publisher DOI: 10.1143/JJAP.38.2448
Abstract: Attempts were made to form regular arrays of size- and position-controlled Pt-dots on GaAs and InP by combining an in situ electrochemical process with the electron beam (EB) lithography. This utilizes the precipitation of Pt nano-particles at the initial stage of electrodeposition. First, electrochemical conditions were optimized in the mode of self-assembled dot array formation on unpatterned substrates. Minimum in-plane dot diameters of 22 nm and 26 nm on GaAs and InP. respectively, were obtained under the optimal pulsed mode. Then, Pt dots were selectively formed on patterned substrates with open circular windows formed by EB lithography, thereby realizing dot-position control. The Pt dot was round to have been deposited at the center of each open window, and the in-plane diameter of the dot could be controlled by the number, width and period of the pulse-waveform applied to substrates. A minimum diameter of 20 nm was realized in windows with a diameter of 100 nm, using a single pulse. Current-voltage (I-V) measurements using an atomic force microscopy (AFM) system with a conductive probe indicated that each Pt dot/n-GaAs contact possessed a high Schottky barrier height of about 1 eV.
Rights: Copyright © 1999 The Japan Society of Applied Physics
Type: article (author version)
URI: http://hdl.handle.net/2115/33091
Appears in Collections:量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 佐藤 威友

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