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Chemical and Potential Bending Characteristics of SiNx/AlGaN Interfaces Prepared by In Situ Metal-Organic Chemical Vapor Deposition

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Title: Chemical and Potential Bending Characteristics of SiNx/AlGaN Interfaces Prepared by In Situ Metal-Organic Chemical Vapor Deposition
Authors: Ogawa, Eri Browse this author
Hashizume, Tamotsu Browse this author →KAKEN DB
Nakazawa, Satoshi Browse this author
Ueda, Tetsuzo Browse this author
Tanaka, Tsuyoshi Browse this author
Keywords: SiN
in situ
MOCVD
AlGaN
XPS
surface
potential
Issue Date: 25-Jun-2007
Publisher: Japan Society of Applied Physics
Journal Title: Japanese Journal of Applied Physics. Pt. 2, Letters & express letters
Volume: 46
Issue: 24
Start Page: L590
End Page: L592
Publisher DOI: 10.1143/JJAP.46.L590
Abstract: We investigate the chemical and potential-bending characteristics of in situ SiNx/AlGaN interfaces prepared by metal-organic chemical vapor deposition. X-ray photoelectron spectroscopy showed that the in situ SiNx layer had typical chemical binding energies corresponding to the Si-N bonds. The in situ SiNx deposition brought no chemical degradation on the AlGaN surface at the SiNx/AlGaN interface, whereas the ex situ deposition of SiNx by a plasma process induced chemical disorder on the AlGaN surface including a composition change and the formation of interfacial oxides. A significant reduction in the surface band bending was observed on the AlGaN surface after the in situ SiNx passivation, probably due to a decrease in the surface state density.
Rights: Copyright © 2007 The Japan Society of Applied Physics
Type: article (author version)
URI: http://hdl.handle.net/2115/33899
Appears in Collections:量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 橋詰 保

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