Nearly Temperature-Independent Saturation Drain Current in a Multi-Mesa-Channel AlGaN/GaN High-Electron-Mobility Transistor


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Please use this identifier to cite or link to this item:http://hdl.handle.net/2115/33900

Title:	Nearly Temperature-Independent Saturation Drain Current in a Multi-Mesa-Channel AlGaN/GaN High-Electron-Mobility Transistor
Authors:	Tamura, Takahiro Browse this author
	Kotani, Junji Browse this author
	Kasai, Seiya Browse this author →KAKEN DB
	Hashizume, Tamotsu Browse this author →KAKEN DB
Issue Date:	25-Feb-2008
Publisher:	The Japan Society of Applied Physics
Journal Title:	Applied Physics Express
Volume:	1
Issue:	2
Start Page:	023001
Publisher DOI:	10.1143/APEX.1.023001
Rights:	Copyright © 2008 The Japan Society of Applied Physics
Type:	article (author version)
URI:	http://hdl.handle.net/2115/33900
Appears in Collections:	量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 橋詰保

OAI-PMH ( junii2 , jpcoar_1.0 )

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