HUSCAP logo Hokkaido Univ. logo

Hokkaido University Collection of Scholarly and Academic Papers >
Research Center for Integrated Quantum Electronics >
Peer-reviewed Journal Articles, etc >

Effects of interface states and temperature on the C-V behavior of metal/insulator/AlGaN/GaN heterostructure capacitors

Files in This Item:
JAP08-Marcin.pdf390.58 kBPDFView/Open
Please use this identifier to cite or link to this item:

Title: Effects of interface states and temperature on the C-V behavior of metal/insulator/AlGaN/GaN heterostructure capacitors
Authors: Miczek, Marcin Browse this author
Mizue, Chihoko Browse this author
Hashizume, Tamotsu Browse this author →KAKEN DB
Adamowicz, Bogusława Browse this author
Issue Date: 28-May-2008
Publisher: American Institute of Physics
Journal Title: Journal of Applied Physics
Volume: 103
Issue: 10
Start Page: 104510
Publisher DOI: 10.1063/1.2924334
Abstract: The impact of states at the insulator/AlGaN interface on the capacitance-voltage (C-V) characteristics of a metal/insulator/AlGaN/GaN heterostructure (MISH) capacitor was examined using a numerical solver of a Poisson equation and taking into account the electron emission rate from the interface states. A parallel shift of the theoretical C-V curves, instead of the typical change in their slope, was found for a MISH device with a 25-nm-thick AlGaN layer when the SiNx/AlGaN interface state density Dit(E) was increased. We attribute this behavior to the position of the Fermi level at the SiNx/AlGaN interface below the AlGaN valence band maximum when the gate bias is near the threshold voltage and to the insensitivity of the deep interface traps to the gate voltage due to a low emission rate. A typical stretch out of the theoretical C-V curve was obtained only for a MISH structure with a very thin AlGaN layer at 300℃. We analyzed the experimental C-V characteristics from a SiNx/Al2O3/AlGaN/GaN structure measured at room temperature and 300℃, and extracted a part of Dit(E). The relatively low Dit (~1011 eV−1 cm−2) in the upper bandgap indicates that the SiNx/Al2O3 bilayer is applicable as a gate insulator and as an AlGaN surface passivant in high-temperature, high-power AlGaN/GaN-based devices.
Rights: Copyright 2008 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
Type: article
Appears in Collections:量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 橋詰 保

Export metadata:

OAI-PMH ( junii2 , jpcoar_1.0 )

MathJax is now OFF:


 - Hokkaido University