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Temperature-Dependent Interface-State Response in an Al2O3/n-GaN Structure

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Title: Temperature-Dependent Interface-State Response in an Al2O3/n-GaN Structure
Authors: Ooyama, Kimihito Browse this author
Kato, Hiroki Browse this author
Miczek, Marcin Browse this author
Hashizume, Tamotsu Browse this author →KAKEN DB
Keywords: GaN
interface state
high temperature
capture cross section
Issue Date: 25-Jul-2008
Publisher: Japan Society of Applied Physics
Journal Title: Japanese Journal of Applied Physics
Volume: 47
Issue: 7
Start Page: 5426
End Page: 5428
Publisher DOI: 10.1143/JJAP.47.5426
Abstract: With a combination of the static capacitance-voltage (C-V) and the capacitance transient (C-t) methods, the interface-state response in an Al2O3/n-GaN structure was investigated at temperatures ranging from 23 to 300℃. We observed pronounced degradation of the static C-V curves measured at high temperatures, arising from the enhancement of charging/discharging rates of interface states at deeper energies within the bandgap of GaN. Faster responses with larger magnitudes also appeared in the time-dependent capacitance at high temperatures. From a simple analysis of the C-t results, we estimated the capture cross section of the states to be on the order of 10^[-19]cm^[2].
Rights: © 2008 The Japan Society of Applied Physics
Type: article (author version)
Appears in Collections:量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 橋詰 保

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