Temperature-Dependent Interface-State Response in an Al2O3/n-GaN Structure


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Please use this identifier to cite or link to this item:http://hdl.handle.net/2115/34646

Title:	Temperature-Dependent Interface-State Response in an Al2O3/n-GaN Structure
Authors:	Ooyama, Kimihito Browse this author
	Kato, Hiroki Browse this author
	Miczek, Marcin Browse this author
	Hashizume, Tamotsu Browse this author →KAKEN DB
Keywords:	GaN
	MIS
	interface state
	C-V
	C-t
	high temperature
	capture cross section
Issue Date:	25-Jul-2008
Publisher:	Japan Society of Applied Physics
Journal Title:	Japanese Journal of Applied Physics
Volume:	47
Issue:	7
Start Page:	5426
End Page:	5428
Publisher DOI:	10.1143/JJAP.47.5426
Abstract:	With a combination of the static capacitance-voltage (C-V) and the capacitance transient (C-t) methods, the interface-state response in an Al2O3/n-GaN structure was investigated at temperatures ranging from 23 to 300℃. We observed pronounced degradation of the static C-V curves measured at high temperatures, arising from the enhancement of charging/discharging rates of interface states at deeper energies within the bandgap of GaN. Faster responses with larger magnitudes also appeared in the time-dependent capacitance at high temperatures. From a simple analysis of the C-t results, we estimated the capture cross section of the states to be on the order of 10^[-19]cm^[2].
Rights:	© 2008 The Japan Society of Applied Physics
Type:	article (author version)
URI:	http://hdl.handle.net/2115/34646
Appears in Collections:	量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 橋詰保

OAI-PMH ( junii2 , jpcoar_1.0 )

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